Thin film magnetic memory device capable of conducting stable data read and write operations

ABSTRACT

A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.

RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No.11/505,476, filed Aug. 17, 2006, which is a Continuation of U.S.application Ser. No. 11/167,411, filed Jun. 28, 2005, now U.S. Pat. No.7,102,922, which is a Divisional of U.S. application Ser. No.10/842,417, filed May 11, 2004, now U.S. Pat. No. 6,922,355, which is aDivisional of U.S. application Ser. No. 10/050,810, filed Jan. 18, 2002,now U.S. Pat. No. 6,788,568, claiming priority of Japanese ApplicationNos. 2001-3128962, filed Apr. 26, 2001, and 2001-243893, filed Aug. 10,2001, the entire contents of each of which are hereby incorporated byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a thin film magnetic memorydevice. More particularly, the present invention relates to a randomaccess memory (RAM) including memory cells having a magnetic tunneljunction (MTJ).

2. Description of the Background Art

An MRAM (Magnetic Random Access Memory) device has attracted attentionas a memory device capable of non-volatile data storage with low powerconsumption. The MRAM device is a memory device capable of non-volatiledata storage using a plurality of thin film magnetic elements formed ina semiconductor integrated circuit and also capable of random access toeach thin film magnetic element.

In particular, recent announcement shows that the performance of theMRAM device is significantly improved by using thin film magneticelements having a magnetic tunnel junction (MTJ) as memory cells. TheMRAM device including memory cells having a magnetic tunnel junction isdisclosed in technical documents such as “A 10ns Read and WriteNon-Volatile Memory Array Using a Magnetic Tunnel Junction and FETSwitch in each Cell”, ISSCC Digest of Technical Papers, TA7.2, February2000, and “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”,ISSCC Digest of Technical Papers, TA7.3, February 2000.

FIG. 66 is a schematic diagram showing the structure of a memory cellhaving a magnetic tunnel junction (hereinafter, also simply referred toas “MTJ memory cell”).

Referring to FIG. 66, the MTJ memory cell includes a tunnel magneticresistive element TMR having its electric resistance value varyingaccording to the storage data level, and an access transistor ATR. Theaccess transistor ATR is formed from a field effect transistor, and iscoupled between the tunnel magnetic resistive element TMR and groundvoltage Vss.

For the MTJ memory cell are provided a write word line WWL forinstructing data write operation, a read word line RWL for instructingdata read operation, and a bit line BL serving as a data line fortransmitting an electric signal corresponding to the storage data levelin the data read and write operations.

FIG. 67 is a conceptual diagram illustrating the data read operationfrom the MTJ memory cell.

Referring to FIG. 67, the tunnel magnetic resistive element TMR has amagnetic layer FL having a fixed magnetic field of a fixed direction(hereinafter, also simply referred to as “fixed magnetic layer FL”), anda magnetic layer VL having a free magnetic field (hereinafter, alsosimply referred to as “free magnetic layer VL”). A tunnel barrier TBformed from an insulator film is provided between the fixed magneticlayer FL and free magnetic layer VL. According to the storage datalevel, either a magnetic field of the same direction as that of thefixed magnetic layer FL or a magnetic field of the direction differentfrom that of the fixed magnetic layer FL has been written to the freemagnetic layer VL in a non-volatile manner.

In the data read operation, the access transistor ATR is turned ON inresponse to activation of the read word line RWL. As a result, a sensecurrent Is flows through a current path formed from the bit line BL,tunnel magnetic resistive element TMR, access transistor ATR and groundvoltage Vss. The sense current Is is supplied as a constant current froma not-shown control circuit.

The electric resistance value of the tunnel magnetic resistive elementTMR varies according to the relative relation of the magnetic fielddirection between the fixed magnetic layer FL and free magnetic layerVL. More specifically, when the fixed magnetic layer FL and freemagnetic layer VL have the same magnetic field direction, the tunnelmagnetic resistive element TMR has a smaller electric resistance valueas compared to the case where both magnetic layers have differentmagnetic field directions. The electric resistance values of the tunnelmagnetic resistive element corresponding to the storage data “1” and “0”are herein represented by Rh and Rl, respectively (where Rh>Rl).

Thus, the electric resistance value of the tunnel magnetic resistiveelement TMR varies according to an externally applied magnetic field.Accordingly, data storage can be conducted based on the variationcharacteristics of the electric resistance value of the tunnel magneticresistive element TMR.

A voltage change produced at the tunnel magnetic resistive element TMRby the sense current Is varies depending on the magnetic field directionstored in the free magnetic layer VL. Therefore, by starting supply ofthe sense current Is with the bit line BL precharged to a high voltage,the storage data level in the MTJ memory cell can be read by monitoringa change in voltage level on the bit line BL.

FIG. 68 is a conceptual diagram illustrating the data write operation tothe MTJ memory cell.

Referring to FIG. 68, in the data write operation, the read word lineRWL is inactivated, so that the access transistor ATR is turned OFF. Inthis state, a data write current for writing a magnetic field to thefree magnetic layer VL is applied to the write word line WWL and bitline BL. The magnetic field direction of the free magnetic layer VL isdetermined by combination of the respective directions of the data writecurrents flowing through the write word line WWL and bit line BL.

FIG. 69 is a conceptual diagram illustrating the relation between thedirection of the data write current and the direction of the magneticfield in the data write operation.

Referring to FIG. 69, a magnetic field Hx of the abscissa indicates thedirection of a magnetic field H(BL) produced by the data write currentflowing through the bit line BL. A magnetic field Hy of the ordinateindicates the direction of a magnetic field H(WWL) produced by the datawrite current flowing through the write word line WWL.

The magnetic field direction stored in the free magnetic layer VL isupdated only when the sum of the magnetic fields H(BL) and H(WWL)reaches the region outside the asteroid characteristic line shown in thefigure. In other words, the magnetic field direction stored in the freemagnetic layer VL is not updated when a magnetic field corresponding tothe region inside the asteroid characteristic line is applied.

Accordingly, in order to update the storage data of the tunnel magneticresistive element TMR by the data write operation, a current must beapplied to both the write word line WWL and bit line BL. Once themagnetic field direction, i.e., the storage data, is stored in thetunnel magnetic resistive element TMR, it is retained therein in anon-volatile manner until another data write operation is conducted.

The sense current Is flows through the bit line BL in the data readoperation. However, the sense current Is is generally set to a valuethat is about one to two orders smaller than the data write current.Therefore, it is less likely that the storage data in the MTJ memorycell is erroneously rewritten by the sense current Is during the dataread operation.

The magnetization characteristics of the magnetic layers of each MTJmemory cell significantly affect the memory cell characteristics. Inparticular, when a change in magnetization direction for data storagebecomes less likely to occur in the tunnel magnetic resistive elementTMR due to end effects of the magnetic element or the like, the magneticfield required for the data write operation is increased, causingincrease in power consumption and magnetic noise due to the increaseddata write current. Moreover, a variation in electric resistance valuedepending on the storage data level is reduced, causing reduction insignal margin in the data read operation.

In the MRAM device using the tunnel magnetic resistive element,reduction in memory cell size is difficult for the structural reason. Inparticular, it is difficult to realize the folded-bit-line structurethat is effective in improving a signal margin in the data readoperation and is generally applied to a dynamic random access memory(DRAM) or the like.

Moreover, in the folded-bit-line structure, complementary bit linesforming a bit line pair are respectively coupled to a memory cell to beread and a read reference voltage. By amplifying the voltage differencebetween the complementary bit lines, the data read operation isconducted with a large signal margin. Accordingly, the read referencevoltage must be set in view of the electric resistance values Rh and Rlof the tunnel magnetic resistive element. However, it is difficult toaccurately set the read reference voltage while allowing manufacturingvariation.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a thin film magneticmemory device including memory cells using a tunnel magnetic resistiveelement having uniform magnetization characteristics.

It is another object of the present invention to provide a thin filmmagnetic memory device capable of ensuring a large signal margin in thedata read operation while allowing manufacturing variation.

It is still another object of the present invention to provide a thinfilm magnetic memory device having a memory cell arrangement suitablefor improved integration, in particular, a memory cell arrangementsuitable for a folded-bit-line structure.

In summary, according to the present invention, a thin film magneticmemory device formed on a semiconductor substrate includes a pluralityof memory cells for storing data. Each memory cell includes an accesselement rendered conductive for forming a path of a data read current,and a magnetic storage portion coupled in series with the access elementand having an electric resistance varying according to storage data. Thethin film magnetic memory device further comprises a first magneticlayer formed on the semiconductor substrate and having a fixedmagnetization direction, a second magnetic layer formed on thesemiconductor substrate and magnetized in a direction according to anexternally applied magnetic field, and an insulating film formed betweenthe first and second magnetic layers. The magnetic storage portion isformed using a prescribed partial region in a planar direction of thesecond magnetic layer.

Accordingly, a primary advantage of the present invention is that themagnetic storage portion in each memory cell can be formed so as to haveuniform magnetization characteristics. This assures a signal margin ofthe data read operation as well as reduces a data write current requiredfor the data write operation, allowing for suppression in currentconsumption and magnetic noise.

According to another aspect of the invention, a thin film magneticmemory device includes a plurality of memory cells, a dummy memory cell,a first data line, a second data line, and a data read circuit. Anelectric resistance value of each memory cell varies according to astorage data level. The dummy memory cell produces a read referencevoltage. The dummy cell includes a plurality of cell units each having asame structure as that of the memory cell. The plurality of cell unitsretain storage data of different levels at least on a one-by-one basis.The first data line is connected to a selected one of the plurality ofmemory cells in data read operation. The second data line is connectedto the dummy memory cell. The data read circuit senses a voltagedifference between the first and second data lines.

Accordingly, the read reference voltage can be produced based on thedata stored in the cell units having the same structure as that of thememory cell. As a result, the data read operation can be conducted witha large signal margin by setting the read reference voltage to anappropriate level while allowing manufacturing variation.

According to still another aspect of the invention, a thin film magneticmemory device includes a plurality of memory cells, a plurality of readword lines, a plurality of write word lines, and a plurality of bitlines. The plurality of memory cells are arranged in rows and columns.The plurality of read word lines are provided respectively correspondingto the memory cell rows, for conducting row selection in data readoperation. The plurality of write word lines are provided respectivelycorresponding to the memory cell rows, for conducting row selection indata write operation. The plurality of bit lines are providedrespectively corresponding to the memory cell columns, for passingtherethrough a data write current and a data read current in the datawrite and read operations, respectively. Each of the plurality of memorycells includes a magnetic storage portion having an electric resistancevarying according to storage data, and an access transistor coupled inseries with the magnetic storage portion between a corresponding bitline and a first voltage. The access transistor includes a gate coupledto a corresponding read word line, a first contact for coupling a sourceregion to the first voltage, and a second contact provided adjacent tothe first contact in the column direction, for coupling a drain regionto the magnetic storage portion. The first and second contacts arerepeatedly arranged in a same manner in every memory cell row. Thememory cells are shifted by ½ pitch between adjacent memory cellcolumns. The write word lines are each formed in a layer located abovethe bit lines.

Thus, the memory cells corresponding to each read word line areconnected to every other bit line. Therefore, the memory cellarrangement suitable for the data read operation based on thefolded-bit-line structure can be realized without increasing the cellsize. Moreover, the distance between the magnetic storage portions canbe increased as compared to the case where the memory cells are notshifted. This suppresses magnetic-field interference between the memorycells, whereby an operation margin can be ensured. The memory cell pitchin the row direction can be easily ensured, allowing for improvedintegration of the memory array.

According to yet another aspect of the invention, a thin film magneticmemory device includes a plurality of memory cells, a plurality of readworld lines, a plurality of write word lines, and a plurality of bitlines. The plurality of memory cells are arranged in rows and columns.The plurality of read word lines are provided respectively correspondingto the memory cell rows, for conducting row selection in data readoperation. The plurality of write word lines are provided respectivelycorresponding to the memory cell rows, for conducting row selection indata write operation. The plurality of bit lines are providedrespectively corresponding to the memory cell columns, for passingtherethrough a data write current and a data read current in the datawrite and read operations, respectively. Each of the plurality of memorycells includes a magnetic storage portion having an electric resistancevarying according to storage data, and an access transistor coupled inseries with the magnetic storage portion between a corresponding bitline and a first voltage. The access transistor includes a gate coupledto a corresponding read word line, a first contact for coupling a sourceregion to the first voltage, and a second contact provided adjacent tothe first contact in the column direction, for coupling a drain regionto the magnetic storage portion. The first and second contacts areinverted in position between adjacent memory cell rows. The memory cellsare shifted by prescribed pitch between adjacent memory cell columns.The write word lines are each formed in a layer located above the bitlines.

Thus, the distance between the magnetic storage portions can beincreased as compared to the case where the memory cells are notshifted. This suppresses magnetic-field interference between the memorycells, whereby an operation margin can be ensured. The memory cell pitchin the row direction can be easily ensured, allowing for improvedintegration of the memory array.

According to a further aspect of the invention, a thin film magneticmemory device includes a plurality of memory cells, a plurality of readworld lines, a plurality of write word lines, and a plurality of bitlines. The plurality of memory cells are arranged in rows and columns.The plurality of read word lines are provided respectively correspondingto the memory cell rows, for conducting row selection in data readoperation. The plurality of write word lines are provided respectivelycorresponding to the memory cell rows, for conducting row selection indata write operation. The plurality of bit lines are providedrespectively corresponding to the memory cell columns, for passingtherethrough a data write current and a data read current in the datawrite and read operations, respectively. Each of the plurality of memorycells includes a magnetic storage portion having an electric resistancevarying according to storage data, and an access transistor coupled inseries with the magnetic storage portion between a corresponding bitline and a first voltage. The access transistor includes a gate coupledto a corresponding read word line, a first contact for coupling a sourceregion to the first voltage, and a second contact provided adjacent tothe first contact in the column direction, for coupling a drain regionto the magnetic storage portion. The first and second contacts arerepeatedly arranged in a same manner in every memory cell row. The firstand second contacts are inverted in position between adjacent memorycell columns. The write word lines are each formed in a layer locatedabove the bit lines.

Thus, the distance between the magnetic storage portions can beincreased. This suppresses magnetic-field interference between thememory cells, whereby an operation margin can be ensured. The memorycell pitch in the row direction can be easily ensured, allowing forimproved integration.

According to a still further aspect of the invention, a thin filmmagnetic memory device includes a plurality of memory cells, a pluralityof read world lines, a plurality of write word lines, and a plurality ofbit lines. The plurality of memory cells are arranged in rows andcolumns. The plurality of read word lines are provided respectivelycorresponding to the memory cell rows, for conducting row selection indata read operation. The plurality of write word lines are providedrespectively corresponding to the memory cell rows, for conducting rowselection in data write operation. The plurality of bit lines areprovided respectively corresponding to the memory cell columns, forpassing therethrough a data write current and a data read current in thedata write and read operations, respectively. Each of the plurality ofmemory cells includes a magnetic storage portion having an electricresistance varying according to storage data, and an access transistorcoupled in series with the magnetic storage portion between acorresponding bit line and a first voltage. The access transistorincludes a gate coupled to a corresponding read word line, a firstcontact for coupling a source region to the first voltage, and a secondcontact provided adjacent to the first contact in the column direction,for coupling a drain region to the magnetic storage portion. The firstand second contacts are repeatedly arranged in a same manner in everymemory cell row. The first and second contacts are inverted in positionbetween adjacent memory cell columns. The memory cells are shifted by ½pitch between adjacent memory cell columns.

Thus, the memory cells corresponding to each read word line areconnected to every other bit line. Therefore, the memory cellarrangement suitable for the data read operation based on thefolded-bit-line structure can be realized without increasing the cellsize.

According to a yet further aspect of the invention, a thin film magneticmemory device includes a plurality of memory cells, a plurality of readworld lines, a plurality of write word lines, and a plurality of bitlines. The plurality of memory cells are arranged in rows and columns.The plurality of read word lines are provided respectively correspondingto the memory cell rows, for conducting row selection in data readoperation. The plurality of write word lines are provided respectivelycorresponding to the memory cell rows, for conducting row selection indata write operation. The plurality of bit lines are providedrespectively corresponding to the memory cell columns, for passingtherethrough a data write current and a data read current in the datawrite and read operations, respectively. Each of the plurality of memorycells includes a magnetic storage portion having an electric resistancevarying according to storage data, and an access transistor coupled inseries with the magnetic storage portion between a corresponding bitline and a first voltage. The access transistor includes a gate coupledto a corresponding read word line, a first contact for coupling a sourceregion to the first voltage, and a second contact provided adjacent tothe first contact in the column direction, for coupling a drain regionto the magnetic storage portion. The first and second contacts areinverted in position between adjacent memory cell rows. The first andsecond contacts are inverted in position between adjacent memory cellcolumns. The write word lines are each formed in a layer located abovethe bit lines.

Thus, the memory cell arrangement suitable for the data write operationbased on the folded-bit-line structure can be realized withoutincreasing the cell size. Moreover, the memory cell pitch in the rowdirection can be easily ensured, allowing for improved integration ofthe memory array.

According to a yet further aspect of the invention, a thin film magneticmemory device includes a plurality of memory cells, a plurality of readworld lines, a plurality of write word lines, and a plurality of bitlines. The plurality of memory cells are arranged in rows and columns.The plurality of read word lines are provided respectively correspondingto the memory cell rows, for conducting row selection in data readoperation. The plurality of write word lines are provided respectivelycorresponding to the memory cell rows, for conducting row selection indata write operation. The plurality of bit lines are providedrespectively corresponding to the memory cell columns, for passingtherethrough a data write current and a data read current in the datawrite and read operations, respectively. Each of the plurality of memorycells includes a magnetic storage portion having an electric resistancevarying according to storage data, and an access transistor coupled inseries with the magnetic storage portion between a corresponding bitline and a first voltage. The access transistor includes a gate coupledto a corresponding read word line, a first contact for coupling a sourceregion to the first voltage, and a second contact provided adjacent tothe first contact in the column direction, for coupling a drain regionto the magnetic storage portion. The first and second contacts areinverted in position between adjacent memory cell rows. The first andsecond contacts are inverted in position between adjacent memory cellcolumns. The memory cells are shifted by ¼ pitch between adjacent memorycell columns. The write word lines are each formed in a layer locatedabove the bit lines.

Thus, the memory cells corresponding to each read word line areconnected to every other bit line. Therefore, the memory cellarrangement suitable for the data read operation based on thefolded-bit-line structure can be realized without increasing the cellsize.

According to a yet further aspect of the invention, a thin film magneticmemory device includes a plurality of memory cells, a plurality of readworld lines, a plurality of write word lines, and a plurality of bitlines. The plurality of memory cells are arranged in rows and columns.The plurality of read word lines are provided respectively correspondingto the memory cell rows, for conducting row selection in data readoperation. The plurality of write word lines are provided respectivelycorresponding to the memory cell rows, for conducting row selection indata write operation. The plurality of bit lines are providedrespectively corresponding to the memory cell columns, for passingtherethrough a data write current and a data read current in the datawrite and read operations, respectively. Each of the plurality of memorycells includes a magnetic storage portion having an electric resistancevarying according to storage data, and an access transistor coupled inseries with the magnetic storage portion between a corresponding bitline and a first voltage. The access transistor includes a gate coupledto a corresponding read word line, a first contact for coupling a sourceregion to the first voltage, and a second contact provided adjacent tothe first contact in the column direction, for coupling a drain regionto the magnetic storage portion. The first contact is shared bycorresponding two memory cells located adjacent to each other in thecolumn direction and forming a single arrangement unit. The write wordlines are each formed in a layer located above the bit lines.

Thus, the memory cells can be arranged with a reduced number of contactsof the access transistors.

According to a yet further aspect of the present invention, a thin filmmagnetic memory device includes a plurality of memory cells forretaining storage data. Each of the memory cells includes an access gateselectively turned ON in data read operation, and a magnetic storageportion connected in series with the access gate, and having either afirst or second electric resistance depending on the storage data. Themagnetic storage portion includes a first magnetic layer having a fixedmagnetization direction, a second magnetic layer that is magnetizedeither in a same direction as, or in a direction opposite to, that ofthe first magnetic layer depending on the storage data to be written,and a first insulating film formed between the first and second magneticlayers. The thin film magnetic memory device further includes: a dataline that is electrically coupled to the magnetic storage portion of aselected memory cell through a turned-ON access gate of the selectedmemory cell in data read operation, the selected memory cell being amemory cell selected from the plurality of memory cells for the dataread operation; a reference data line for transmitting in the data readoperation a read reference voltage for comparison with a voltage on thedata line; and a plurality of dummy memory cells for producing the readreference voltage, each of the dummy memory cells being provided forevery fixed set of the memory cells. Each of the dummy memory cellsincludes a dummy magnetic storage portion, and a dummy access gateselectively turned ON in the data read operation, for electricallycoupling the dummy magnetic storage portion to the reference data line.The dummy magnetic storage portion includes a third magnetic layer thatis magnetized in a fixed direction, a fourth magnetic layer that ismagnetized in a direction that crosses the magnetization direction ofthe third magnetic layer, and a second insulating film formed betweenthe third and fourth magnetic layers.

Such a thin film magnetic memory device is capable of setting anelectric resistance of the dummy magnetic storage portion having thesame structure as that of the magnetic storage portion in the memorycell to an intermediate value of two electric resistances of the memorycell each corresponding to the storage data. This allows a dummy memorycell for producing a read reference voltage to be fabricated withoutcomplicating the manufacturing process.

According to a yet further aspect of the present invention, a thin filmmagnetic memory device includes a plurality of memory cells forretaining storage data. Each of the memory cells includes an access gateselectively turned ON in data read operation, and a magnetic storageportion connected in series with the access gate, and having either afirst electric resistance or a second electric resistance higher thanthe first electric resistance depending on the storage data. Themagnetic storage portion includes a first magnetic layer having a fixedmagnetization direction, a second magnetic layer that is magnetized in asame direction as, or in a direction opposite to, that of the firstmagnetic layer depending on the storage data to be written, and a firstinsulating film formed between the first and second magnetic layers. Thethin film magnetic memory device further includes: a data line that iselectrically coupled to the magnetic storage portion of a selectedmemory cell through a turned-ON access gate of the selected memory cellin data read operation, the selected memory cell being a memory cellselected from the plurality of memory cells for the data read operation;a reference data line for transmitting in the data read operation a readreference voltage for comparison with a voltage on the data line; and aplurality of dummy memory cells for producing the read referencevoltage, each of the dummy memory cells being provided for every fixedset of the memory cells. Each of the dummy memory cells includes a dummyaccess gate selectively turned ON in the data read operation, and aplurality of dummy magnetic storage portions that are electricallycoupled to the reference data line in response to turning-ON of thedummy access gate. Each of the dummy magnetic storage portions includesa third magnetic layer that is magnetized in a fixed direction, a fourthmagnetic layer that is magnetized either in a same direction as, or in adirection opposite to, that of the third magnetic layer, and a secondinsulating film formed between the third and fourth magnetic layers.Each of the dummy magnetic storage portions is connected in series withat least one of the remainder.

Such a thin film magnetic memory device is capable of producing a readreference voltage by a dummy memory cell that includes a dummy magneticstorage portion having the same structure and magnetized in the samemanner as that of the magnetic storage portion of the memory cell. Thisenables fabrication of the dummy memory cell without complicating themanufacturing process. Moreover, a reduced voltage can be applied to atunnel barrier (second insulating film) in each dummy memory cell,allowing for improved reliability of the dummy memory cell that isselected frequently.

According to a yet further aspect of the present invention, a thin filmmagnetic memory device includes: a plurality of magnetic memory cellsfor retaining storage data written by an applied magnetic field; and adummy memory cell for generating a read reference voltage in data readoperation. Each of the magnetic memory cells and the dummy memory cellinclude a magnetic storage portion having either a first electricresistance value or a second electric resistance value that is higherthan the first electric resistance value depending on a level of thestorage data, and an access gate connected in series with the magneticstorage portion, and selectively turned ON. The thin film magneticmemory device further includes: a first data line that is electricallycoupled to a magnetic memory cell selected from the plurality ofmagnetic memory cells in data read operation so that a data read currentis supplied to the first data line; a second data line that iselectrically coupled to the dummy memory cell in data read operation sothat a data read current equal to that of the first data line issupplied to the second data line; a data read circuit for producing readdata based on respective voltages on the first and second data lines;and a resistance adding circuit for adding a third electric resistancein series with the first data line, the third electric resistance beingsmaller than a difference between the first and second electricresistance values. The magnetic storage portion in the dummy memory cellstores a data level corresponding to the second electric resistancevalue.

Such a thin film magnetic memory device enables the memory cell and thedummy memory cell to have the same structure, allowing a data readmargin to be assured according to manufacturing variation.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram showing the overall structure of anMRAM device 1 according to an embodiment of the present invention.

FIG. 2 is a conceptual diagram showing the structure of a memory arrayof FIG. 1.

FIG. 3 is a cross-sectional view showing a tunnel magnetic resistiveelement of FIG. 2.

FIG. 4 is a conceptual diagram showing the magnetization direction in afree magnetic layer of FIG. 3.

FIG. 5 is a conceptual diagram showing magnetization characteristics inan easy axis region.

FIG. 6 is a conceptual diagram showing magnetization characteristics ina hard axis region.

FIG. 7 is a conceptual diagram showing a first structural example of atunnel magnetic resistive element according to a first embodiment of thepresent invention.

FIG. 8 is a cross sectional view of the tunnel magnetic resistiveelement of FIG. 7.

FIG. 9 is a conceptual diagram showing a second structural example ofthe tunnel magnetic resistive element according to the first embodiment.

FIG. 10 is a conceptual diagram showing a third structural example ofthe tunnel magnetic resistive element according to the first embodiment.

FIG. 11 is a conceptual diagram showing the arrangement of tunnelmagnetic resistive elements according to a first modification of thefirst embodiment.

FIG. 12 is a conceptual diagram showing the arrangement of tunnelmagnetic resistive elements according to a second modification of thefirst embodiment.

FIG. 13 is a conceptual diagram showing the arrangement of tunnelmagnetic resistive elements according to a third modification of thefirst embodiment.

FIG. 14 is a circuit diagram showing a first structural example of anMTJ memory cell using a diode as access element.

FIG. 15 is a circuit diagram showing a second structural example of theMTJ memory cell using a diode as access element.

FIG. 16 is a structural diagram showing a first structural example of anMTJ memory cell on a semiconductor substrate.

FIG. 17 is a structural diagram showing a second structural example ofthe MTJ memory cell on the semiconductor substrate.

FIG. 18 is a structural diagram showing a third structural example ofthe MTJ memory cell on the semiconductor substrate.

FIG. 19 is a conceptual diagram showing a first arrangement example ofMTJ memory cells according to a second embodiment of the presentinvention.

FIG. 20 is a conceptual diagram showing a second arrangement example ofMTJ memory cells according to the second embodiment.

FIG. 21 is a conceptual diagram showing a third arrangement example ofMTJ memory cells according to the second embodiment.

FIG. 22 is a conceptual diagram showing a fourth arrangement example ofMTJ memory cells according to the second embodiment.

FIG. 23 is a conceptual diagram showing a fifth arrangement example ofMTJ memory cells according to the second embodiment.

FIG. 24 is a conceptual diagram showing a first arrangement example ofMTJ memory cells according to a first modification of the secondembodiment.

FIG. 25 is a conceptual diagram showing a second arrangement example ofMTJ memory cells according to the first modification of the secondembodiment.

FIG. 26 is a conceptual diagram showing a third arrangement example ofMTJ memory cells according to the first modification of the secondembodiment.

FIG. 27 is a conceptual diagram showing a first arrangement example ofMTJ memory cells according to a second modification of the secondembodiment.

FIG. 28 is a conceptual diagram showing a second arrangement example ofMTJ memory cells according to the second modification of the secondembodiment.

FIG. 29 is a conceptual diagram showing a third arrangement example ofMTJ memory cells according to the second modification of the secondembodiment.

FIG. 30 is a conceptual diagram showing a fourth arrangement example ofMTJ memory cells according to the second modification of the secondembodiment.

FIG. 31 is a conceptual diagram showing a fifth arrangement example ofMTJ memory cells according to the second modification of the secondembodiment.

FIG. 32 is a conceptual diagram showing a first arrangement example ofMTJ memory cells according to a third modification of the secondembodiment.

FIG. 33 is a conceptual diagram showing a second arrangement example ofMTJ memory cells according to the third modification of the secondembodiment.

FIG. 34 is a conceptual diagram showing a third arrangement example ofMTJ memory cells according to the third modification of the secondembodiment.

FIG. 35 is a conceptual diagram illustrating the data read operationbased on the folded-bit-line structure in a thin film magnetic memorydevice of the present invention.

FIG. 36 is a circuit diagram showing a first structural example of adummy memory cell according to a third embodiment of the presentinvention.

FIG. 37 is a circuit diagram showing a second structural example of thedummy memory cell according to the third embodiment.

FIG. 38 is a block diagram showing the structure of a portion associatedwith the data read operation in a memory array and its peripheralcircuitry according to a first modification of the third embodiment.

FIG. 39 is a conceptual diagram illustrating the data write operation toa parallel dummy cell shown in FIG. 38.

FIG. 40 is a block diagram showing the structure of a portion associatedwith the data read operation in a memory array and its peripheralcircuitry according to a second modification of the third embodiment.

FIG. 41 is a block diagram showing the structure of a portion associatedwith the data read operation in a memory array and its peripheralcircuitry according to a third modification of the third embodiment.

FIG. 42 is a conceptual diagram illustrating the data write operation toa series dummy cell shown in FIG. 41.

FIG. 43 is a block diagram showing the structure of a portion associatedwith the data read operation in a memory array and its peripheralcircuitry according to a fourth modification of the third embodiment.

FIG. 44 is a block diagram showing the structure of a portion associatedwith the data read operation in a memory array and its peripheralcircuitry according to a fifth modification of the third embodiment.

FIG. 45 is a conceptual diagram illustrating the data write operation toa parallel dummy cell shown in FIG. 44.

FIG. 46 is a block diagram showing the structure of a portion associatedwith the data read operation in a memory array and its peripheralcircuitry according to a sixth modification of the third embodiment.

FIG. 47 is a conceptual diagram illustrating the data write operation toa series dummy cell shown in FIG. 46.

FIG. 48 is a block diagram showing the structure of a portion associatedwith the data read operation in a memory array and its peripheralcircuitry according to a seventh modification of the third embodiment.

FIG. 49 is a conceptual diagram illustrating the data write operation toa parallel dummy cell shown in FIG. 48.

FIGS. 50A and 50B are conceptual diagrams illustrating a firststructural example of a dummy memory cell according to a fourthembodiment of the present invention.

FIG. 51 is a structural diagram showing the structure of a dummy memorycell of a second structural example according to the fourth embodiment.

FIG. 52 is a conceptual diagram showing a third structural example ofthe dummy memory cell according to the fourth embodiment.

FIG. 53 is a conceptual diagram showing the structure of a tunnelmagnetic resistive element in FIG. 52.

FIG. 54 is a conceptual diagram showing a fourth structural example ofthe dummy memory cell according to the fourth embodiment.

FIG. 55 is a schematic diagram showing the structure of a dummy memorycell according to a first modification of the fourth embodiment.

FIG. 56 is a circuit diagram showing an equivalent circuit of the dummymemory cell in FIG. 55.

FIG. 57 is a schematic diagram showing the structure of a dummy memorycell according to a second modification of the fourth embodiment.

FIG. 58 is a timing chart illustrating operation of the dummy memorycell according to the second modification of the fourth embodiment.

FIG. 59 is a conceptual diagram showing the structure of a dummy memorycell according to a third modification of the fourth embodiment.

FIG. 60 is a timing chart illustrating operation of the dummy memorycell according to the third modification of the fourth embodiment.

FIG. 61 is a conceptual diagram showing the structure of a dummy memorycell according to a fourth modification of the fourth embodiment.

FIG. 62 is a conceptual diagram illustrating data write operation to atunnel magnetic resistive element in FIG. 61.

FIG. 63 is a conceptual diagram illustrating the structure of a dummymemory cell according to a fifth modification of the fourth embodiment.

FIG. 64 is a conceptual diagram illustrating data write operation to thedummy memory cell in FIG. 63.

FIG. 65 is a diagram showing another structural example of a resistiveelement in FIG. 63.

FIG. 66 is a schematic diagram showing the structure of a memory cellhaving a magnetic tunnel junction.

FIG. 67 is a conceptual diagram illustrating the data read operationfrom the MTJ memory cell.

FIG. 68 is a conceptual diagram illustrating the data write operation tothe MTJ memory cell.

FIG. 69 is a conceptual diagram illustrating the relation between thedirection of a data write current and the direction of a magnetic fieldin the data write operation.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that the samereference numerals and characters denote the same or correspondingportions throughout the figures.

First Embodiment

Referring to FIG. 1, an MRAM device 1 according to an embodiment of thepresent invention conducts random access in response to an externalcontrol signal CMD and address signal ADD, thereby inputting write dataDIN and outputting read data DOUT.

The MRAM device 1 includes a control circuit 5 for controlling theoverall operation of the MRAM device 1 in response to the control signalCMD, and a memory array 10 having a plurality of MTJ memory cellsarranged in rows and columns.

Referring to FIG. 2, the memory array 10 includes a plurality of MTJmemory cells MC arranged in n rows by m columns (where n, m is a naturalnumber). Hereinafter, the MTJ memory cells are also simply referred toas “memory cells”. Each memory cell MC has the same structure as that ofFIG. 66, and includes a tunnel magnetic resistive element TMR and anaccess transistor ATR. By arranging the memory cells in rows and columnson a semiconductor substrate, a highly integrated MRAM device can beimplemented.

A bit line BL, write word line WWL and read word line RWL are providedfor each memory cell MC. A plurality of write word lines WWL and aplurality of read word lines RWL are provided respectively correspondingto the memory cell rows, and a plurality of bit lines BL are providedrespectively corresponding to the memory cell columns. Accordingly, nwrite word lines WWL1 to WWLn, n read word lines RWL1 to RWLn, and m bitlines BL1 to BLm are provided for the n×m memory cells.

Referring back to FIG. 1, the MRAM device 1 further includes a rowdecoder 20 for conducting row selection in the memory array 10 accordingto a row address RA indicated by the address signal ADD, a columndecoder 25 for conducting column selection in the memory array 10according to a column address CA indicated by the address signal ADD, aword line driver 30 for selectively activating the read word line RWLand write word line WWL based on the row selection result of the rowdecoder 20, a word line current control circuit 40 for applying a datawrite current to the write word line WWL in the data write operation,and read/write control circuits 50, 60 for applying a data write current±Iw and a sense current Is in the data read and write operations.

Referring to FIG. 3, the tunnel magnetic resistive element TMR includesan antiferromagnetic layer 101, a partial region of a fixed magneticlayer 102 formed on the antiferromagnetic layer 101 and having a fixedmagnetic field of a fixed direction, a free magnetic layer 103 that ismagnetized by an applied magnetic field, a tunnel barrier 104, i.e., aninsulator film formed between the fixed magnetic layer 102 and freemagnetic layer 103, and a contact electrode 105.

The antiferromagnetic layer 101, fixed magnetic layer 102 and freemagnetic layer 103 are formed from an appropriate magnetic material suchas FeMn or NiFe. The tunnel barrier 104 is formed from Al₂O₃ or thelike.

The tunnel magnetic resistive element TMR is electrically coupled to anupper wiring through a barrier metal 106 provided as necessary. Thebarrier metal 106 serves as a buffer material for electrically couplingwith a metal wiring. The contact electrode 105 is electrically coupledto a lower wiring (not shown). For example, the upper wiring correspondsto a bit line BL, and the lower wiring corresponds to a metal wiringcoupled to the access transistor ATR.

Thus, the tunnel magnetic resistive element TMR having a magnetic tunneljunction can be electrically coupled between the upper and lowerwirings.

FIG. 4 is a conceptual diagram showing the magnetization direction inthe free magnetic layer of the tunnel magnetic resistive element. FIG. 4exemplarily shows a plan view of the free magnetic layer 103 in the casewhere the tunnel magnetic resistive element TMR has a rectangular shape.

Referring to FIG. 4, the rectangular free magnetic layer 103 has an easyaxis (EA) in the lengthwise direction (the horizontal direction in FIG.4), and a hard axis (HA) in the widthwise direction (the verticaldirection in FIG. 4). Accordingly, in an easy axis region 110 locatedabout the center, the magnetization direction is easily inverted inresponse to an external magnetic field applied in the easy axisdirection. However, in hard axis regions 112 and 114 located at bothends, the magnetization direction is not easily inverted even if anexternal magnetic field is applied in the easy axis direction.

FIGS. 5 and 6 show a hysteresis curve illustrating the respectivemagnetization characteristics of the easy axis and hard axis regions.

Referring to FIG. 5, the easy axis region 110 is magnetized to +Mc inresponse to application of a magnetic field of the positive directionlarger than a prescribed magnetic field +Hc of the easy axis direction,and is magnetized to −Mc in response to application of a magnetic fieldof the negative direction larger than a prescribed magnetic field −Hc.Thus, the magnetization direction is not changed when a magnetic fieldof a prescribed level or less, i.e., in the range from −Hc to +Hc, isapplied. Therefore, the easy axis region 110 has characteristics thatare desirable as a memory cell.

Referring to FIG. 6, the hard axis regions 112 and 114 are not easilymagnetized in response to a magnetic field of the easy axis direction,but have such characteristics that the direction and amount ofmagnetization vary gradually. Accordingly, unlike the easy axis regionin which the direction and amount of magnetization are set on a binarybasis in response to a magnetic field of the easy axis direction, thehard axis regions have characteristics that are undesirable as a memorycell.

As a result, in a memory cell that includes, as the free magnetic region103, a region having such characteristics as those of the hard axisregion, a sufficient variation in electric resistance valuecorresponding to the storage data level cannot be ensured in the dataread operation, making it difficult to ensure a signal margin. Moreover,in the data write operation, an increased magnetic field must be appliedin order to sufficiently invert the magnetization direction, resultingin an increased data write current. As a result, current consumption aswell as magnetic noise are increased.

Referring to FIG. 7, in the first structural example of the tunnelmagnetic resistive element according to the first embodiment, a regionof the free magnetic layer 103 formed on the fixed magnetic layer 102,i.e., a region corresponding to the easy axis region, is used as atunnel junction region 115. In other words, the hard axis regions havingcharacteristics that are undesirable as a memory cell is not used as aportion of the tunnel magnetic resistive element TMR.

As a result, only a current flowing through the easy axis regioncorresponding to the tunnel junction region 115 is used for the dataread operation. Therefore, a sufficient variation in the electricresistance value corresponding to the storage data level can be assured,so that a signal margin of the data read operation can be assured.Moreover, a data write current required for the data write operation isreduced, allowing for suppression in current consumption and magneticnoise.

FIG. 8 shows a cross-sectional view taken along line P-P′ of FIG. 7.Hereinafter, fabrication of the tunnel magnetic resistive element TMRshown in FIG. 7 will be described in connection with FIG. 8.

Referring to FIG. 8, after the antiferromagnetic layer 101 and fixedmagnetic layer 102 are formed with a desirable pattern on thesemiconductor substrate, an interlayer film 107 of, e.g., SiO₂, isformed thereon. Although not shown in the figure, the antiferromagneticlayer 101 is electrically coupled to the access transistor through aprescribed lower wiring (not shown). The contact electrode 105electrically coupled to the lower wiring is formed so as to cover theregion corresponding to the tunnel junction region 115.

An opening reaching the fixed magnetic layer 102 is formed in the tunneljunction portion of the interlayer film 107. The tunnel barrier 104 andfree magnetic layer 103 are formed with a desired thickness in theopening. The barrier metal 106 is formed as necessary. Thereafter,desired patterning is conducted.

Thus, the tunnel magnetic resistive element TMR can be fabricated thatis electrically coupled between an upper wiring 108 (i.e., a metalwiring formed in a layer located above the interlayer film 107) and alower wiring (not shown).

Note that, instead of patterning the tunnel barrier 104 and freemagnetic layer 103 in the opening formed in the interlayer film 107, thetunnel barrier 104 and free magnetic layer 103 formed with a prescribedthickness on the fixed magnetic layer 102 may be partially removed with,e.g., chemical-mechanical polishing (CMP) such that only the portioncorresponding to the tunnel junction remains.

As shown in FIGS. 9 and 10, the tunnel junction region 115 mayalternatively be provided using a partial region in the longitudinaldirection (the horizontal direction of FIGS. 9 and 10) that correspondsto the easy axis region.

In the structure of FIG. 9, the fixed magnetic layer 102 and freemagnetic layer 103 extend in the same direction. In the structure ofFIG. 10, the fixed magnetic layer 102 and free magnetic layer 103 extendcrosswise.

First Modification of First Embodiment

Referring to FIG. 11, in a tunnel magnetic resistive element accordingto the first modification of the first embodiment, a plurality ofseparate free magnetic layers 103 are formed on the fixed magnetic layer102 having a large area. The free magnetic layers 103 are separatelyprovided corresponding to the respective memory cells. The fixedmagnetic layer 102 is shared by a plurality of memory cells.

As in the case of FIG. 7, each free magnetic layer 103 has a tunneljunction region 115 corresponding to the easy axis region. Note that, byforming a not-shown contact electrode in a region equivalent to orsmaller than the tunnel junction region 115, a spreading resistance inthe path of a sense current (data read current) flowing through thefixed magnetic layer 102 in the data read operation can be ignored.

In such an arrangement, a tunnel magnetic resistive element TMR of eachmemory cell is formed in the magnetic easy axis region. As a result, asignal margin of the data read operation is ensured. Moreover, a datawrite current required for the data write operation is reduced, allowingfor suppression in current consumption and magnetic noise.

Second Modification of First Embodiment

Referring to FIG. 12, in a tunnel magnetic resistive element accordingto the second modification of the first embodiment, a common fixedmagnetic layer 102 and a common free magnetic layer 103 each having alarge area are formed for a plurality of memory cells. The tunneljunction regions 115 are formed respectively corresponding to the memorycells. The tunnel junction regions 115 are formed in a regioncorresponding to the easy axis region within the free magnetic layer103. As in the first modification of the first embodiment, not-showncontact electrodes are formed corresponding to the respective tunneljunction regions 115.

A common write word line WWL and a not-shown common read word line RWLare provided for a memory cell group of the same row, i.e., a group ofmemory cells located adjacent to each other in the row direction.Similarly, a common bit line BL is provided for a memory cell group ofthe same column, i.e., a group of memory cells located adjacent to eachother in the column direction. FIG. 12 exemplarily shows the write wordlines WWL1 to WWL3 corresponding to the first to third rows and the bitlines BL1 to BL3 corresponding to the first to third columns.

As in the first modification of the first embodiment, with thisarrangement, a signal margin of the data read operation can be ensured.

The free magnetic layer 103 is shaped to have a sufficient area.Therefore, the shape of the free magnetic layer 103 does notgeometrically restrict the easy axis direction in the free magneticlayer 103. This enables a composite magnetic field of the respectivedata write magnetic fields produced from the data write currents flowingthrough the write word line WWL and bit line BL in each memory cell tohave the same direction as the easy axis direction. The fixed magneticlayer 102 is formed so that the magnetization direction thereof matchesthe direction of the composite magnetic field.

Accordingly, a change in magnetization direction in the free magneticlayer 103, i.e., a data write magnetic field required to write thestorage data, can be generated with a smaller data write current. Thisenables further suppression in current consumption and magnetic noise ascompared to the first modification of the first embodiment.

Third Modification of First Embodiment

Referring to FIG. 13, a tunnel magnetic resistive element according tothe third modification of the first embodiment is different from that ofthe second modification of the first embodiment shown in FIG. 12 in thatthe free magnetic layer 103 is formed in every memory cell row. Morespecifically, a plurality of strip-shaped free magnetic layers 103corresponding to the respective memory cell rows are formed on thecommon, large-area fixed magnetic layer 102 provided for the pluralityof memory cell rows.

The tunnel junction regions 115 are formed in a region corresponding tothe easy axis region of each free magnetic layer 103. The tunneljunction region 115 is provided for every memory cell. As in the firstmodification of the first embodiment, not-shown contact electrodes areprovided corresponding to the respective tunnel junction regions 115.

This arrangement geometrically restricts the easy axis direction in eachfree magnetic layer 103, requiring a data write current of the samelevel as that in the first modification of the first embodiment. On theother hand, the free magnetic layer 103 can be electricallyindependently provided for each memory cell row. Accordingly, the datawrite and read operations can be stabilized as compared to the secondmodification of the first embodiment in which the memory cells ofdifferent rows are electrically coupled to each other in the freemagnetic region 103.

Fourth Modification of First Embodiment

A memory cell having an access transistor ATR as an access element isshown in the first embodiment and first to third modifications thereof.However, a memory cell using a diode as an access element and beingsuitable for improved integration can also be applied.

Referring to FIG. 14, a memory cell MCDD using a diode includes a tunnelmagnetic resistive element TMR and an access diode DM. The access diodeDM is coupled between the tunnel magnetic resistive element TMR and wordline WL. The forward direction thereof is the direction from the tunnelmagnetic resistive element TMR toward the word line WL. The bit line BLextends in such a direction that crosses the word line WL, and iscoupled to the tunnel magnetic resistive element TMR.

A data write current is applied to the word line WL and bit line BL inorder to write the data to the memory cell MCDD. The direction of thedata write current is determined according to the write data level, asin the case of the memory cell using an access transistor.

In the data read operation, the word line WL corresponding to theselected memory cell is set to a low voltage (e.g., ground voltage Vss)state. At this time, the bit line BL has been precharged to a highvoltage (e.g., power supply voltage Vcc) state so that the access diodeDM is rendered conductive by forward biasing. Accordingly, a sensecurrent Is can be supplied to the tunnel magnetic resistive element TMR.

The word lines WL corresponding to the non-selected memory cells are setto the high voltage state. Therefore, the corresponding access diodes DMare reverse-biased and thus retained non-conductive. As a result, thesense current Is does not flow therethrough.

Thus, the data read and write operations can be conducted also in theMTJ memory cells using an access diode.

Referring to FIG. 15, a memory cell MCD using a diode includes a tunnelmagnetic resistive element TMR and an access diode DM, as in the case ofFIG. 14. The memory cell MCD of FIG. 15 is different from the memorycell MCDD of FIG. 14 in that a read word line RWL and a write word lineWWL are separately provided. The bit line BL extends in such a directionthat crosses the write word line WWL and read word line RWL, and iselectrically coupled to the tunnel magnetic resistive element TMR.

The access diode DM is coupled between the tunnel magnetic resistiveelement TMR and read word line RWL. The forward direction thereof is thedirection from the tunnel magnetic resistive element TMR toward the readword line RWL. The write word line WWL is provided near the tunnelmagnetic resistive element TMR without being connected to any otherwiring.

In the memory cell MCDD of FIG. 14, a data write current flows throughthe word line WL and bit line BL in the data write operation, causing avoltage drop on the word line WL and bit line BL. Depending on thevoltage distribution on the word line WL and bit line BL, such a voltagedrop may possibly turn ON the PN junction of the access diode DM in anon-selected memory cell(s). This may unexpectedly cause a current toflow through the MTJ memory cell, resulting in erroneous data writeoperation.

In the memory cell MCD of FIG. 15, however, a current need not besupplied to the read word line RWL in the data write operation.Therefore, the voltage on the read word line RWL can be stably retainedin the high voltage state (power supply voltage Vcc), whereby the accessdiode DM can be reliably reverse-biased and retained in thenon-conductive state. As a result, the data write operation can bestabilized as compared to the MTJ memory cell MCDD shown in FIG. 14.

The same effects can be obtained even when the memory cells suitable forimproved integration as shown in FIGS. 14 and 15 are used in the firstembodiment and first to third modifications thereof.

Second Embodiment

The memory cell arrangement for improving the integration of the memoryarray will be described in the second embodiment.

Referring to FIG. 16, an access transistor ATR is formed in a p-typeregion 122 of a semiconductor main substrate 120. The access transistorATR has source/drain regions (n-type regions) 123, 124 and a gate 125. Asource contact 130 s and a drain contact 130 d are formed respectivelycorresponding to the source/drain regions 123 and 124.

The source contact 130 s is coupled to a source line SL formed in afirst metal wiring layer M1. The source line SL supplies the groundvoltage Vss for forming a sense current (data read current) path in thedata read operation. A metal wiring formed in a second metal wiringlayer M2 is used for a write word line WWL. A bit line BL is formed in athird metal wiring layer M3.

A tunnel magnetic resistive element TMR is formed between the secondmetal wiring layer M2 of the write word line WWL and the third metalwiring layer M3 of the bit line BL. The drain contact 130 d iselectrically coupled to the tunnel magnetic resistive element TMRthrough a metal film 128 formed in a contact hole, the first and secondmetal wiring layers M1 and M2, and a barrier metal 106 that is formed asnecessary.

In the MTJ memory cell, the read word line RWL and write word line WWLare provided as independent wirings. The read word line RWL is providedin order to control the gate voltage of the access transistor ATR, and acurrent need not be actively applied to the read word line RWL.Accordingly, from the standpoint of improved integration, the read wordline RWL is formed from a polysilicon layer, polycide structure, or thelike in the same wiring layer as that of the gate 125 of the accesstransistor ATR without providing an additional independent metal wiringlayer.

In the data write operation, a relatively large data write current forgenerating a magnetic field having a magnitude equal to or larger than aprescribed value must be applied to the write word line WWL and bit lineBL. Therefore, the write word line WWL and bit line BL are each formedfrom a metal wiring.

Referring to FIG. 17, a second structural example is different from thefirst structural example of FIG. 16 in that the source/drain region 123corresponding to the source contact 130 s is directly coupled to theground voltage Vss. For example, the respective source/drain regions 123of the access transistors of the same memory cell row need only beelectrically coupled to each other in order to supply the ground voltageVss thereto.

This eliminates the need for the source line SL of FIG. 16. Therefore,the write word line WWL and bit line BL are respectively formed in thefirst and second metal wiring layers M1 and M2. As in the case of FIG.16, the read word line RWL is formed in the same wiring layer as that ofthe gate 125 of the access transistor ATR.

Referring to FIG. 18, a third structural example is different from thefirst structural example of FIG. 16 in that the write word line WWL isformed in a layer located above the bit line BL. For example, the writeword line WWL and bit line BL are respectively formed in the third andsecond metal wiring layers M3 and M2. Since the access transistor ATR,source line SL and read word line RWL are arranged in the same manner asthat of FIG. 16, detailed description thereof will not be repeated.

Thus, the MTJ memory cell arrangement on the semiconductor substrate isclassified into two cases: the bit line BL is formed in a layer locatedabove the write word line WWL (FIGS. 16 and 17); and the write word lineWWL is formed in a layer located above the bit line BL (FIG. 18).

Referring to FIG. 19, in the first arrangement example of the MTJ memorycells according to the second embodiment, a repetition unit denoted with140 a corresponds to a single memory cell MC. In the memory array 10,the repetition units 140 a are successively located, whereby the memorycells MC are arranged in rows and columns. The memory cell size is 8F²according to the design standard.

FIG. 19 exemplarily shows the memory cells MC in the range from thefirst row, first column to the second row, second column, andcorresponding read word lines RWL1, RWL2, write word lines WWL1, WWL2and bit lines BL1, BL2.

In each memory cell MC, the tunnel magnetic resistive element TMR isformed in a layer located above the source contact 130 s, and a contact130 b between the tunnel magnetic resistive element TMR and bit line BLis also formed. As shown in FIGS. 16 to 18, the tunnel magneticresistive element TMR is coupled to the drain contact 130 d.

The write word line WWL does not overlap the drain contact 130 d.Therefore, the write word line WWL can be formed near the tunnelmagnetic resistive element TMR either in a layer located above or belowthe bit line BL.

Referring to FIG. 20, in the second arrangement example of the MTJmemory cells according to the second embodiment, the source contact 130s and drain contact 130 d are located at the same positions within eachof the memory cells MC of the same row. However, the source contact 130s and drain contact 130 d are inverted in position between everyadjacent rows. Such an arrangement is herein also referred to as “rowstripe inversion arrangement”. In the row stripe inversion arrangement,two adjacent memory cells in the column direction form a singlerepetition unit 140 b. In the entire memory array 10, the repetitionunits 140 b are successively located, whereby the memory cells MC arearranged in rows and columns. The memory cell size is 8F² as in the caseof FIG. 19.

FIG. 20 exemplarily shows the memory cells MC in the range from thefirst row, first column to the second row, second column, andcorresponding read word lines RWL1, RWL2, write word lines WWL1, WWL2and bit lines BL1, BL2.

Since the tunnel magnetic resistive element TMR, bit line BL and contact130 b of each memory cell MC are arranged in the same manner as that ofFIG. 19, detailed description thereof will not be repeated.

In the structure of FIG. 20 as well, the write word line WWL can beformed near the tunnel magnetic resistive element TMR either in a layerlocated above or below the bit line BL.

Referring to FIG. 21, the third arrangement example of the secondembodiment corresponds to the first arrangement example of the secondembodiment in FIG. 19 with the repetition units 140 a being shifted by ½pitch (half pitch) between adjacent memory cell columns.

FIG. 21 exemplarily shows the read word lines RWL1 to RWL4 and writeword lines WWL1 to WWL4 corresponding to the first to fourth rows, andthe bit lines BL1 and BL2 corresponding to the first and second columns.

In such an arrangement, the memory cells corresponding to the selectedread word line RWL are connected to every other bit line BL. Therefore,the memory cell arrangement suitable for the data read operation basedon the folded-bit-line structure can be realized without increasing thecell size.

In the data read operation based on the folded-bit-line structure, everytwo bit lines form a bit line pair. One of two complementary bit linesof the same bit line pair is connected to the corresponding memory cell,whereas the other is not connected to any memory cell. For example, thebit lines BL1 and BL2 form the same bit line pair, so that the bit lineBL2 serves as a complementary line /BL1 of the bit line BL1 in the dataread operation.

Moreover, the distance between the tunnel magnetic resistive elementsTMR can be increased as compared to the case of FIG. 19 in which therepetition units are not shifted. This suppresses magnetic-fieldinterference between the memory cells, whereby an operation margin canbe ensured. Since the tunnel magnetic resistive elements TMR can bealternately located in the row direction, the memory cell pitch in therow direction can be easily ensured, allowing for further improvedintegration of the memory array.

However, by shifting the repetition units 140 a by half pitch, theregion of the write word line WWL overlaps the drain contact 130 dcoupled to the tunnel magnetic resistive element TMR. Accordingly, inorder to realize the third arrangement example, the write word line WWLmust be formed in a layer located above the bit line BL, as shown inFIG. 18.

Referring to FIG. 22, the fourth arrangement example of the secondembodiment corresponds to the second arrangement example of the secondembodiment in FIG. 20 with the repetition units 140 b being shifted by ½pitch (half pitch) between adjacent memory cell columns.

FIG. 22 exemplarily shows the memory cells MC in the range from thefirst row, first column to the second row, second column, andcorresponding read word lines RWL1, RWL2, write word lines WWL1, WWL2and bit lines BL1, BL2.

In this arrangement, the distance between the tunnel magnetic resistiveelements TMR can be increased as compared to the case of FIG. 20 inwhich the repetition units are not shifted. This suppressesmagnetic-field interference between the memory cells, whereby anoperation margin can be ensured. Since the tunnel magnetic resistiveelements TMR can be alternately located in the row direction, the memorycell pitch in the row direction can be easily ensured, allowing forfurther improved integration of the memory array.

However, by shifting the repetition units 140 b by half pitch, theregion of the write word line WWL overlaps the drain contact 130 dcoupled to the tunnel magnetic resistive element TMR. Accordingly, inorder to realize the fourth arrangement example, the write word line WWLmust be formed in a layer located above the bit line BL, as shown inFIG. 18.

Referring to FIG. 23, the fifth arrangement example of the secondembodiment corresponds to the second arrangement example of the secondembodiment in FIG. 20 with the repetition units 140 b being shifted by ¼pitch (quarter pitch) between adjacent memory cell columns.

FIG. 23 exemplarily shows some of the memory cells MC, and correspondingread word lines RWL1 to RWL4, write word line WWL1 to WWL3 and bit linesBL1 to BL4.

In such an arrangement, the memory cells corresponding to the selectedread word line RWL are connected to every other bit line BL. Therefore,the memory cell arrangement suitable for the data read operation basedon the folded-bit-line structure can be realized without increasing thecell size. For example, the bit lines BL1 and BL2 form the same bit linepair, so that the bit line BL2 serves as a complementary line /BL1 ofthe bit line BL1 in the data read operation. Similarly, the bit linesBL3 and BL4 form the same bit line pair, so that the bit line BL4 servesas a complementary line /BL3 of the bit line BL3 in the data readoperation.

First Modification of Second Embodiment

Referring to FIG. 24, in the first arrangement example according to thefirst modification of the second embodiment, the source contacts 130 sare shared between adjacent memory cells in the column direction. Arepetition unit 140 c corresponds to two memory cells MC. Since a spacecorresponding to a single contact is provided in each repetition unit140 c, the memory cell size is designed to 8F² as in the case of thesecond embodiment. In the memory array 10, the repetition units 140 care successively located, whereby the memory cells MC are arranged inrows and columns.

The drain contact 130 d coupled to the tunnel magnetic resistive elementTMR is formed in each memory cell. Above the drain contact 130 d, thetunnel magnetic resistive element TMR is connected to the correspondingbit line BL through the contact 130 b. Accordingly, in order to realizethe arrangement of FIG. 24, the write word line WWL must be formed in alayer located above the bit line BL, as shown in FIG. 18.

Note that, as shown in FIGS. 16 to 18, the distance between the bit lineBL and tunnel magnetic resistive element TMR is shorter than thatbetween the write word line WWL and tunnel magnetic resistive elementTMR. Therefore, with the current amount being the same, a magnetic fieldproduced by the data write current flowing though the bit line BL islarger than that produced by the data write current flowing through thewrite word line WWL.

Accordingly, in order to apply the data write magnetic field ofapproximately the same strength to the tunnel magnetic resistive elementTMR, a larger data write current must be supplied to the write word lineWWL than to the bit line BL. As described above, the bit line BL andwrite word line WWL are formed in the metal wiring layers in order toreduce the electric resistance value. However, an excessive currentdensity in the wiring may possibly cause disconnection or short-circuitof the wiring due to an electromigration phenomenon, thereby possiblydegrading the operation reliability. It is therefore desirable tosuppress the current density of the wiring receiving the data writecurrent.

Therefore, with the arrangement of FIG. 24, the write word line WWLlocated farther away from the tunnel magnetic resistive element TMR thanis the bit line BL and thus requiring a larger data write current has awiring width that is at least wider than that of the bit line BL,enabling an increased cross-sectional area of the write word line WWL.This suppresses a current density in the write word line WWL, resultingin improved reliability of the MRAM device.

For the improved reliability, it is also effective to form a metalwiring requiring a larger data write current (i.e., the write word lineWWL in the second embodiment) from a highly electromigration-resistantmaterial. For example, in the case where the other metal wirings areformed from an aluminum alloy (Al alloy), the metal wirings that may besubjected to electromigration may be formed from copper (Cu).

Referring to FIG. 25, the second arrangement example according to thefirst modification of the second embodiment corresponds to thearrangement of FIG. 24 with the repetition units 140 c being shifted by½ pitch (half pitch) between adjacent memory cell columns. Since thearrangement of FIG. 25 is otherwise the same as that of FIG. 24,detailed description thereof will not be repeated.

FIG. 25 exemplarily shows some of the memory cells MC, and correspondingread word lines RWL1 to RWL4, write word lines WWL1, WWL2 and bit linesBL, /BL.

In such an arrangement, the memory cells corresponding to the selectedread word line RWL are connected to every other bit line BL. Therefore,the memory cell arrangement suitable for the data read operation basedon the folded-bit-line structure can be realized without increasing thecell size. For example, the bit lines BL1 and BL2 form the same bit linepair, so that the bit line BL2 serves as a complementary line /BL1 ofthe bit line BL1 in the data read operation.

Referring to FIG. 26, the third arrangement example according to thefirst modification of the second embodiment corresponds to thearrangement of FIG. 24 with the repetition units 140 c being shifted by¼ pitch (quarter pitch) between adjacent memory cell columns.

The write word lines WWL and read word lines RWL are alternatelyarranged as in the case of FIG. 23.

FIG. 26 exemplarily shows some of the read word lines (RWL1 to RWL4),the write word lines (WWL1 to WWL3) and the bit lines (BL1 to BL4), andmemory cells MC corresponding to these signal lines.

With such an arrangement, the memory cell arrangement suitable for thedata read operation based on the folded-bit-line structure can berealized without increasing the cell size, as in the case of FIG. 25.For example, the bit lines BL1 and BL3 form a bit line pair, so that thebit line BL3 serves as a complementary line /BL1 of the bit line BL1 inthe data read operation. Similarly, the bit lines BL2 and BL4 formanother bit line pair, so that the bit line BL4 serves as acomplementary line /BL2 of the bit line BL2 in the data read operation.

Moreover, the distance between the tunnel magnetic resistive elementsTMR can be increased as compared to the case of FIG. 24 in which therepetition units are not shifted. This suppresses magnetic-fieldinterference between the memory cells, whereby an operation margin canbe ensured. Since the tunnel magnetic resistive elements TMR can bealternately located in the row direction, the memory cell pitch in therow direction can be easily ensured, allowing for further improvedintegration of the memory array.

Second Modification of Second Embodiment

Referring to FIG. 27, in the first arrangement example of the MTJ memorycells according to the second modification of the second embodiment, thesource contact 130 s and drain contact 130 d are located at the samepositions within each of the memory cells MC of the same column.However, the source contact 130 s and drain contact 130 d are invertedin position between every adjacent columns. Accordingly, two adjacentmemory cells in the column direction form a single repetition unit 140d. In the entire memory array 10, the repetition units 140 d aresuccessively located, whereby the memory cells MC are arranged in rowsand columns. The memory cell size is 8F² as in the case of FIG. 19.

Above the source contact 130 s, the tunnel magnetic resistive elementTMR of each memory cell is connected to the corresponding bit line BLthough the contact 130 b. Each write word line WWL is located in aregion overlapping the drain contact 130 d coupled to the tunnelmagnetic resistive element TMR. Therefore, the write word line WWL mustbe formed in a layer located above the bit line BL, as shown in FIG. 18.

FIG. 27 exemplarily shows the read word lines RWL1, RWL2, write wordlines WWL1 to WWL4, and bit lines BL1, BL2.

In such an arrangement, the distance between the tunnel magneticresistive elements TMR can be increased as compared to the case of FIGS.19, 20 and the like. This suppresses magnetic-field interference betweenthe memory cells, whereby an operation margin can be ensured. Since thetunnel magnetic resistive elements TMR can be alternately located in therow direction, the memory cell pitch in the row direction can be easilyensured, allowing for further improved integration of the memory array.

Moreover, the memory cells corresponding to the selected write word lineWWL are connected to every other bit line BL. Therefore, the memory cellarrangement suitable for the data write operation based on thefolded-bit-line structure can be realized without increasing the cellsize.

In the data write operation based on the folded-bit-line structure,every two bit lines form a bit line pair, and a data write current ofthe opposite directions is applied to two complementary bit lines of thesame bit line pair. These two complementary bit lines are electricallycoupled to each other at their one ends, and respectively coupled todifferent voltages at the other ends. This enables efficient supply ofthe data write current without providing a portion for sinking the datawrite current. For example, the bit lines BL1 and BL2 form a bit linepair, so that the bit line BL2 serves as a complementary line (/WBL1) ofthe bit line BL1 (WBL1) in the data write operation.

Referring to FIG. 28, the second arrangement example according to thesecond modification of the second embodiment is different from the firstarrangement example of FIG. 27 in that the data write operation is notconducted based on the folded-bit-line structure, but on a bit-line bybit-line basis. Since the second arrangement example of FIG. 28 isotherwise the same as the first arrangement example of FIG. 27, detaileddescription thereof will not be repeated.

Thus, the wiring width of the write word line WWL can be ensured as inthe case of FIGS. 24 and 25. This suppresses a current density in thewrite word line WWL, resulting in improved reliability of the MRAMdevice.

Referring to FIG. 29, the third arrangement example according to thesecond modification of the second embodiment corresponds to thearrangement of FIG. 27 with the repetition units 140 d being shifted by½ pitch (half pitch) between adjacent memory cell columns.

The write word line WWL does not overlap the drain contact 130 d coupledto the tunnel magnetic resistive element TMR. Therefore, the write wordline WWL can be formed either in a layer located above or below the bitline BL. Since the arrangement of FIG. 29 is otherwise the same as thatof FIG. 27, detailed description thereof will not be repeated.

FIG. 29 exemplarily shows the read word lines RWL1 to RWL4, write wordlines WWL1 to WWL3, and bit lines BL1, BL2.

With such an arrangement, the memory cells corresponding to the selectedread word line RWL are connected to every other bit line BL. Therefore,the memory cell arrangement suitable for the data read operation basedon the folded-bit-line structure can be realized without increasing thecell size. For example, the bit lines BL1 and BL2 form a bit line pair,so that the bit line BL2 serves as a complementary line /BL1 of the bitline BL1 in the data read operation.

Referring to FIG. 30, the fourth arrangement example according to thesecond modification of the second embodiment corresponds to acombination of the arrangement of FIG. 27 with the row stripe inversionarrangement. Accordingly, four adjacent memory cells corresponding totwo rows by two columns form a single repetition unit 140 e. In theentire memory array 10, the repetition units 140 e are successivelylocated, whereby the memory cells MC are arranged in rows and columns.The memory cell size is designed to 8F² as in the case of FIG. 27.

Each write word line WWL is located in a region overlapping the draincontact 130 d coupled to the tunnel magnetic resistive element TMR.Therefore, the write word line WWL must be formed in a layer locatedabove the bit line BL, as shown in FIG. 18.

FIG. 30 exemplarily shows the read word lines RWL1, RWL2, write wordlines WWL1 to WWL4, and bit lines BL1, BL2.

In such an arrangement as well, the memory cell arrangement suitable forthe data write operation based on the folded-bit-line structure can berealized without increasing the cell size, as in the case of FIG. 27.Moreover, since the tunnel magnetic resistive elements TMR can bealternately located in the row direction, the memory cell pitch in therow direction can be easily ensured, allowing for further improvedintegration of the memory array.

Note that, in the arrangement of FIG. 30, it is also possible to ensurethe wiring width of the write word line WWL instead of conducting thedata write operation based on the folded-bit-line structure, as in thecase of FIG. 28.

Referring to FIG. 31, the fifth arrangement example according to thesecond modification of the second embodiment corresponds to thearrangement of FIG. 30 with the repetition units 140 e being shifted by¼ pitch (quarter pitch) between adjacent memory cell columns. As in thecase of FIG. 30, each write word line WWL must be formed in a layerlocated above the bit line BL.

FIG. 31 exemplarily shows the memory cells MC in the range from thefirst row, first column to the fourth row, second column, andcorresponding read word lines RWL1 to RWL4, write word lines WWL1 toWWL4 and bit lines BL1, BL2.

In such an arrangement, the memory cells corresponding to the selectedread word line RWL are connected to every other bit line BL. Therefore,the memory cell arrangement suitable for the data read operation basedon the folded-bit-line structure can be realized without increasing thecell size. For example, the bit lines BL1 and BL2 form a bit line pair,so that the bit line BL2 serves as a complementary line /BL1 of the bitline BL1 in the data read operation.

Third Modification of Second Embodiment

Referring to FIG. 32, in the first arrangement example according to thethird modification of the second embodiment, the source contacts 130 sare shared between adjacent memory cells in the column direction. Sincethe source contact 130 s and drain contact 130 d are located at regularintervals regardless of a repetition unit 140 f, the memory cell size isdesigned to 6F². The repetition unit 140 f corresponds to two memorycells MC sharing the same source contact 130 s. In the memory array 10,the repetition units 140 f are successively located, whereby the memorycells MC are arranged in rows and columns.

As a result, although the data write or read operation cannot beconducted based on the folded-bit-line structure, further improvedintegration of the memory array and thus reduction in size of the MRAMdevice can be achieved.

The drain contact 130 d coupled to the tunnel magnetic resistive elementTMR is formed in each memory cell. Above the drain contact 130 d, thetunnel magnetic resistive element TMR is connected to the correspondingbit line BL through the contact 130 b. Accordingly, in order to realizethe arrangement of FIG. 32, the write word line WWL must be formed in alayer located above the bit line BL, as shown in FIG. 18.

Moreover, the writing width of the write word line WWL located fartheraway from the tunnel magnetic resistive element TMR than is the bit lineBL and thus requiring a larger data write current can be ensured,enabling an increased cross-sectional area of the write word line WWL.This suppresses a current density in the write word line WWL, resultingin improved reliability of the MRAM device.

Referring to FIG. 33, the second arrangement example according to thethird modification of the second embodiment corresponds to thearrangement of FIG. 32 with the repetition units 140 f being shifted by½ pitch (half pitch) between adjacent memory cell columns. Since thearrangement of FIG. 33 is otherwise the same as that of FIG. 32,detailed description thereof will not be repeated.

In such an arrangement, the tunnel magnetic resistive elements TMR canbe alternately located in the row direction. Therefore, in addition tothe effects of the arrangement of FIG. 32, the memory cell pitch in therow direction can be easily ensured, allowing for further improvedintegration of the memory array.

Referring to FIG. 34, the third arrangement example according to thethird modification of the second embodiment corresponds to thearrangement of FIG. 32 with the repetition units 140 f being shifted by¼ pitch (quarter pitch) between adjacent memory cell columns.

Since the arrangement of FIG. 34 is otherwise the same as that of FIG.32, detailed description thereof will not be repeated. As a result, inaddition to the effects of the arrangement of FIG. 32, a current densityin the write word line WWL can further be suppressed, resulting infurther improved reliability of the MRAM device.

Third Embodiment

The structure for accurately setting a read reference voltage in thedata write operation will be described in the third embodiment.

Referring to FIG. 35, it is herein assumed that memory cells MC1 and MC2retain the storage data “0” and “1”, respectively. The memory cells MC1and MC2 are connected to the bit line BL. The bit line /BL forming a bitline pair together with the bit line BL is coupled to a dummy memorycell DMC.

In the data read operation, a constant sense current (data read current)Is is supplied from a current supply circuit 51 of a data read circuit50 r to these memory cells. Similarly, a common sense current Is, forexample, is supplied to the dummy memory cell DMC.

As descried before, the tunnel magnetic resistive elements TMR of thememory cells retaining the storage data “1” and “0” have electricresistance values Rh and Rl, respectively. The difference between Rh andRl, i.e., the difference between the electric resistance values producedin the tunnel magnetic resistive elements TMR according to thedifference in storage data level, is herein denoted with ΔR. In general,ΔR is designed in the range of about 10% to about 40% of Rl.

When the memory cell MC1 retaining the storage data “0” is selected forthe read operation, a read word line RWLa is activated so that theaccess transistor ATR of the memory cell MC1 is turned ON. Accordingly,a path of the sense current Is including the tunnel magnetic resistiveelement TMR is formed between the current supply circuit 51 and groundvoltage Vss. As a result, the read voltage transmitted to the data readcircuit 50 r through the bit line BL is settled to VL=Is·R. The electricresistance value R includes an electric resistance value Rl of thetunnel magnetic resistive element TMR of the memory cell MC1, a channelresistance of the access transistor ATR thereof, a wiring resistance ofthe bit line BL, and the like.

When the memory cell MC2 retaining the storage data “1” is selected forthe read operation, a read word line RWLb is activated, whereby a pathof the sense current Is is similarly formed for the memory cell MC2. Asa result, the read voltage is settled to VH=Is·(R+ΔR), which is higherthan VL.

The data read operation is conducted by sensing and amplifying thevoltage difference between the bit line connected to the memory cell (BLin FIG. 35) and bit line connected to the dummy memory cell (/BL in FIG.35). Accordingly, the read reference voltage Vref produced by the dummymemory cell must be accurately set to a value close to an intermediatevalue of the read voltages VH and VL, i.e., (VH+VL)/2.

For example, provided that the dummy memory cell DMC is formed from aresistive element having an electric resistance value Rm in view of theelectric resistance values Rh and Rl of the tunnel magnetic resistiveelement TMR (e.g., Rm=(Rh+Rl)/2), an appropriate read reference voltageVref can be produced by supplying a common sense current Is to the dummymemory cell DMC.

In such a structure, however, the read reference voltage Vref variesaccording to the manufacturing variation of the electric resistancevalue Rm of the dummy memory cell. Moreover, a proper level of the readreference voltage Vref also varies according the manufacturing variationof the memory cell MC to be read. This may possibly make it difficult toensure a signal margin of the data read operation while allowing themanufacturing variation.

Referring to FIG. 36, a dummy memory cell DCP according to the firststructural example of the third embodiment includes two cell units CU0and CU1 arranged in parallel. Each of the cell units CU0 and CU1 has thesame structure as that of the memory cell MC, and includes a tunnelmagnetic resistive element TMR and an access transistor ATR that arecoupled in series between the bit line BL and ground voltage Vss.

The respective access transistors ATR of the cell units CU0 and CU1 havetheir gates respectively connected to dummy read word lines DRWL andDRWL′ that are activated or inactivated simultaneously.

Different storage data “0” and “1” are written to the cell units CU0 andCU1, respectively.

In the data read operation, a constant current corresponding to twicethe sense current Is supplied to the memory cell MC, i.e., 2·Is, issupplied from a current supply circuit 52 to the dummy memory cell DCP.The dummy read word lines DRWL and DRWL′ are both activated in the dataread operation.

Accordingly, in the data read operation, the two cell units CU0 and CU1respectively retaining the storage data “0” and “1” are connected inparallel between the bit line BL for transmitting the read referencevoltage Vref and the ground voltage Vss. As a result, the following readreference voltage Vref is produced by the dummy memory cell DMP:

$\begin{matrix}{{Vref} = {{{2 \cdot I}\; {s \cdot {1/\left( {{1/R} + {1/\left( {R + {\Delta \; R}} \right)}} \right)}}} = {{{2 \cdot I}\; {s \cdot {\left( {R + {\Delta \; R}} \right)/\left( {2 + {\Delta \; {R/R}}} \right)}}} \approx {\left( {{VL} + {VH}} \right)/2.}}}} & (1)\end{matrix}$

Provided that the memory cell MC and the cell units CU0, CU1 of thedummy memory cell DCP are fabricated on the same memory array under thesame manufacturing conditions, the respective tunnel magnetic resistiveelements TMR are likely to have the same characteristics. Therefore, theread reference voltage Vref of the dummy memory cell DCP can be reliablyset to an intermediate value of the read voltages VH and VL as given bythe above equation (1), while allowing the manufacturing variation.

Referring to FIG. 37, a dummy memory cell DCS according to the secondstructural example of the third embodiment includes two cell units CU0and CU1 arranged in series. Each of the cell units CU0 and CU1 has thesame structure as that of the memory cell MC.

The respective access transistors ATR of the cell units CU0 and CU1 havetheir gates connected to a common dummy read word line DRWL.

Different storage data “0” and “1” are written to the cell units CU0 andCU1, respectively. The data write operation to the dummy memory cell DCScan be conducted in the same manner as that of the dummy memory cellDCP.

In the data read operation, a constant current corresponding to half thesense current Is supplied to the memory cell MC, i.e., Is/2, is suppliedfrom the current supply circuit 52 to the dummy memory cell DCS. Thedummy read word line DRWL is activated in the data read operation.

Accordingly, in the data read operation, the two cell units CU0 and CU1respectively retaining the storage data “0” and “1” are connected inseries between the bit line BL for transmitting the read referencevoltage Vref and the ground voltage Vss. As a result, the following readreference voltage Vref is produced by the dummy memory cell DCS:

$\begin{matrix}{{{Vref} \approx {\left( {I\; {s/2}} \right) \cdot \left( {R + \left( {R + {\Delta \; R}} \right)} \right)}} = {{I\; {s \cdot \left( {R + {\Delta \; {R/2}}} \right)}} = {\left( {{VL} + {VH}} \right)/2.}}} & (2)\end{matrix}$

As described before, the respective tunnel magnetic resistive elementsTMR of the memory cell CM and the cell units CU0, CU1 of the dummymemory cell DCS are expected to have the same characteristics.Therefore, the read reference voltage Vref of the dummy memory cell DCScan be reliably set to an intermediate value of the read voltages VH andVL as given by the above equation (2), while allowing the manufacturingvariation.

Moreover, the dummy memory cell DCS has smaller current consumption inthe data read operation, as compared to the dummy memory cell DCP ofFIG. 36.

Note that, hereinafter, the dummy memory cell DCP of FIG. 36 is alsoreferred to as “parallel dummy cell DCP”, and the dummy memory cell DCSof FIG. 37 is also referred to as “series dummy cell DCS”.

First Modification of Third Embodiment

Hereinafter, variations of the memory array structure including thedummy memory cells according to the third embodiment will be described.

Referring to FIG. 38, the memory array 10 includes a plurality of memorycells MC arranged in rows and columns, and a plurality of dummy memorycells arranged so as to form two dummy rows. The parallel dummy cellsDCP of FIG. 36 are used as dummy memory cells. Although not entirelyshown in the figure, the memory cells MC are arranged in n rows by mcolumns in the memory array 10 (where n, m is a natural number).

Each parallel dummy cell DCP includes two cell units CU arranged inparallel. Each cell unit has the same structure as that of the memorycell MC. Thus, the memory cells MC arranged in rows and columns in thememory array 10 can be used as cell units of the parallel dummy cellsDCP. Accordingly, the number of rows of the memory cells MC in thememory array 10 need only be increased, thereby facilitating arrangementof the dummy memory cells without complicating the manufacturingprocess.

In the memory array 10, read word lines RWL and write word lines WWL(not shown) are provided corresponding to the respective memory cellrows. Bit line pairs BLP are also provided corresponding to therespective memory cell columns. Each bit line pair BLP is formed fromcomplementary bit lines BL and /BL. Although not entirely shown in thefigure, the read word lines RWL1 to RWLn, write word lines WWL1 to WWLn,bit line pairs BLP1 to BLPm, and bit lines BL1 to BLm, /BL1 to BLm areprovided in the entire memory array 10.

FIG. 38 exemplarily shows the read word lines RWL1 and RWL2 respectivelycorresponding to the first and second memory cell rows, and the bit linepairs BLP1 and BLP2 respectively corresponding to the first and secondcolumns. The bit line pair BLP1 is formed from bit lines BL1 and /BL1,and the bit line pair BLP2 is formed from bit lines BL2 and /BL2.

Note that, hereinafter, the write word lines, read word lines, bit linesand bit line pairs are also collectively denoted with WWL, RWL, BL (/BL)and BLP, respectively. A specific write word line, read word line, bitline and bit line pair are denoted with WWL1, RWL1, BL1 (/BL1), BLP1 andthe like.

The memory cells MC of each row are respectively coupled to either thebit lines BL or bit lines /BL. For example, in the case of the memorycells MC of the first column, the memory cell of the first row iscoupled to the bit line BL1, and the memory cell of the second row iscoupled to the bit line /BL1. Similarly, the memory cells MC of the oddrows are respectively coupled to one bit lines BL1 to BLm of the bitline pairs, and the memory cells MC of the even rows are respectivelycoupled to the other bit lines /BL1 to /BLm.

As a result, when the read word line RWL is selectively activatedaccording to the row selection result, either the one bit lines BL1 toBLm or the other bit lines /BL1 to /BLm of the bit line pairs arecoupled to the memory cells MC.

A plurality of parallel dummy cells DCP arranged over two rows arerespectively coupled to the bit lines BL1 to BLm and /BL1 to /BLm. Eachparallel dummy cell DCP is selected either by a dummy read word lineDRWL1 or DRWL2. The parallel dummy cells DCP selected by the dummy readword line DRWL1 are respectively coupled to the bit lines /BL1 to /BLm.The remaining parallel dummy cells DCP selected by the dummy read wordline DRWL2 are respectively coupled to the bit lines BL1 to BLm.

The dummy read word lines DRWL1 and DRWL2 are selectively activated soas to couple either one bit lines BL or the other bit lines /BL of thebit line pairs, i.e., the bit lines that are not coupled to the memorycells MC of the selected memory cell row, to the parallel dummy cellsDCP, respectively.

As a result, one bit lines BL1 to BLm and the other bit lines /BL1 to/BLm of the respective bit line pairs are coupled to a plurality ofmemory cells MC of the selected memory cell row, and a plurality ofparallel dummy cells, respectively.

The column decoder 25 activates one of column selection lines CSL1 toCSLm to the selected state (H level) according to the decode result ofthe column address CA. The column selection lines CSL1 to CSLm areprovided corresponding to the respective memory cell columns.

The structure of a column selection gate included in the read/writecontrol circuit 50 will now be described.

The column selection gates CSG1, CSG2, . . . are provided correspondingto the respective memory cell columns. One of the plurality of columnselection gates is turned ON according to the column selection result ofthe column decoder 25, thereby coupling data buses DB and /DB of a databus pair DBP to the corresponding bit lines BL and /BL, respectively.

For example, the column selection gate CSG1 includes a transistor switchelectrically coupled between the data bus DB and bit line BL1, and atransistor switch electrically coupled between the data bus DB and bitline /BL1. These transistor switches are turned ON/OFF according to thevoltage level on the column selection line CSL1. More specifically, whenthe column selection line CSL1 is activated to the selected state (Hlevel), the column selection gate CSG1 electrically couples the databuses DB and /DB to the bit lines BL1 and /BL1, respectively. The columnselection gates corresponding to the other memory cell columns have thesame structure.

The read/write control circuit 60 is located opposite to the columnselection gates CSG1 to CSGm with the memory array 10 interposedtherebetween.

The read/write control circuit 60 includes bit-line connectingtransistors 62-1, 62-2, . . . which are turned ON/OFF according to abit-line equalizing signal BLEQ. The bit-line connecting transistors areprovided respectively corresponding to the memory cell columns. Forexample, the bit-line connecting transistor 62-1 corresponds to thefirst memory cell column, and electrically couples the bit lines BL1 and/BL1 to each other in response to activation (H level) of the bit-lineequalizing signal BLEQ.

Similarly, each of the bit-line connecting transistors respectivelycorresponding to the other memory cell columns electrically couples thebit lines BL and /BL of the corresponding bit line pair to each other inresponse to activation of the bit-line equalizing signal BLEQ.Hereinafter, the bit-line connecting transistors 62-l to 62-m are alsocollectively referred to as bit-line connecting transistors 62.

The bit-line equalizing signal BLEQ is produced by the control circuit5. The bit-line equalizing signal BLEQ is activated to H level when theMRAM device 1 is in the standby state, when the memory array 10 is inthe non-selected state during active period of the MRAM device 1, andwhen the data write operation is conducted during active period of theMRAM device 1. The bit-line equalizing signal BLEQ is activated to Hlevel in order to connect the bit lines BL and /BL of each folded bitline pair to each other in each memory cell column.

The bit line-equalizing signal BLEQ is inactivated to L level when thedata read operation is conducted during active period of the MRAMdevice 1. In response to this, the bit lines BL and /BL of each bit linepair in each memory cell column are disconnected from each other.

A not-shown precharging circuit precharges each bit line BL, /BL to aprescribed precharge voltage at prescribed timing before the data readoperation.

FIG. 39 is a conceptual diagram illustrating the data write operation tothe parallel dummy cell.

FIG. 39 exemplarily illustrates the data write operation to two paralleldummy cells DCP corresponding to the bit line pair BLP1.

Referring to FIG. 39, the parallel dummy cell DCP connected to the bitline BL1 includes cell units CU1 and CU2. Similarly, the parallel dummycell DCP connected to the bit line /BL1 includes cell units CU3 and CU4.

Dummy write word lines DWWL1 and DWWL2 extend in such a direction thatcross the bit lines BL, /BL, i.e., in the row direction. The dummy writeword lines DWWL1 and DWWL2 respectively correspond to the two cell unitsof each of the plurality of parallel dummy cells DCP arranged over tworows.

In the data write operation, the bit-line connecting transistor 62-i isturned ON. Therefore, the data write current supplied to the bit linepair BLP1 flows through the bit lines BL1 and /BL1 as a reciprocatingcurrent.

First, as shown by the solid arrows in the figure, the dummy write wordline DWWL1 is activated so that a data write current Ip flowstherethrough. Moreover, a data write current +Iw is applied to the bitline pair BLP1. Thus, the storage data of different levels arerespectively written to the cell units CU1 and CU3. It is herein assumedthat the data “1” is written to the cell unit CU1, and data “0” iswritten to the cell unit CU3.

Then, as shown by the dashed arrows in the figure, the dummy write wordline DWWL2 is activated so that the data write current Ip flowstherethrough. Moreover, a data write current −Iw having the oppositedirection to that of the data write current +Iw is applied to the bitline pair BLP1. Thus, the storage data of different levels from those ofthe cell units CU1 and CU3 can be written to the cell units CU2 and CU4,respectively. More specifically, the data “0” is written to the cellunit CU2, and data “1” is written to the cell unit CU4.

Regarding the parallel dummy cells DCP corresponding to the other bitline pairs as well, the same data write operation is conducted inparallel. As a result, the storage data “1” and “0” can be respectivelywritten to two cell units of each parallel dummy cell DCP in two writecycles.

The data write operation to the dummy memory cell may either beconducted as a part of the initialization sequence upon power-ON of theMRAM device, or may be conducted periodically during operation of theMRAM device. For example, the data write operation to the dummy memorycell may be conducted in each cycle upon every memory access.

Referring back to FIG. 38, the data read circuit 50 r outputs read dataDOUT in the data read operation. The data read circuit 50 r includescurrent supply circuits 51 and 52 for supplying constant current Is and2·Is to internal nodes Ns1 and Ns2 in response to the power supplyvoltage Vcc, respectively, an amplifier 53 for amplifying the voltagedifference between the internal nodes Ns1 and Ns2 and outputting theread data DOUT, a switch 54 for connecting one of the internal nodes Ns1and Ns2 to the data bus DB, and a switch 55 for connecting the otherinternal node to the data bus DB.

The switches 54 and 55 make a complementary selection based on a rowselection signal RA0. The row selection signal RA0 is a one-bit signalindicating whether the selected memory cell row is an odd row or evenrow. More specifically, when an odd row is selected, the switch 54connects the internal node Ns1 to the data bus DB, and the switch 55connects the internal node Ns2 to the data bus DB. In contrast, when aneven row is selected, the switch 54 connects the internal node Ns2 tothe data bus DB, and the switch 55 connects the internal node Ns1 to thedata bus DB.

As a result, in the bit line pair corresponding to the column selectionresult, the sense current Is is supplied to the bit line connected tothe memory cell MC. On the other hand, a current corresponding to twicethe sense current, i.e., 2·Is, is supplied to the bit line connected tothe parallel dummy cell. Thus, the read voltage VH or VL is produced atthe internal node Ns1 according to the storage data of the selectedmemory cell MC. On the other hand, the read reference voltage Vref isproduced at the internal node Ns2 by the parallel dummy cell asdescribed in connection with FIG. 36.

The amplifier 53 senses and amplifies the voltage difference between theinternal nodes Ns1 and Ns2, i.e., the difference between the readvoltage VH or VL and read reference voltage Vref, thereby producing theread data DOUT corresponding to the storage data of the selected memorycell.

Thus, the data read operation based on the folded-bit-line structure canbe conducted with a large signal margin by using the read referencevoltage Vref that is reliably set to an intermediate value of the readvoltages VH and VL while allowing manufacturing variation.

Second Modification of Third Embodiment

A memory array using the parallel dummy cells DCP in the open-bit-linestructure will be described in the second modification of the thirdembodiment.

Referring to FIG. 40, the memory array is divided into two memory matsMTa and MTb in the row direction. In each memory mat MTa, MTb, read wordlines RWL and write word lines WWL (not shown) are providedcorresponding to the respective memory cell rows, and bit lines BL areprovided corresponding to the respective memory cell columns.

Each memory mat MTa, MTb has the same number of bit lines based on theopen-bit-line structure. In FIG. 40, the bit lines provided in onememory mat MTa are denoted with BL1, BL2, . . . , and the bit linesprovided in the other memory mat MTb are denoted with /BL1, /BL2, . . .. The memory cells MC are coupled to each bit line in each memory cellrow.

FIG. 40 exemplarily shows read word lines RWLla, RWL2 a and RWL1 b, RWL2b respectively corresponding to the first and second memory cell rows,and bit lines BL1, /BL1 and BL2, /BL2 respectively corresponding to thefirst and second memory cell columns. A not-shown precharging circuitsets the bit lines BL and /BL to a prescribed precharge voltage atprescribed timing before the data read operation.

In each memory mat MTa, MTb, a plurality of dummy memory cells arearranged so as to form a single dummy row. The parallel dummy cells DCPof FIG. 36 are used as dummy memory cells.

The plurality of parallel dummy cells DCP in the memory mat MTa arecoupled to the bit lines BL1, BL2, . . . , respectively. The pluralityof parallel dummy cells DCP in the memory mat MTb are coupled to the bitlines /BL1, /BL2, . . . , respectively.

Each of the parallel dummy cells DCP in the memory mat MTa is selectedby a dummy read word line DRWLa. Each of the parallel dummy cells DCP inthe memory mat MTb is selected by a dummy read word line DRWLb.

The dummy read word line DRWLa, DRWLb is activated in the non-selectedmemory mat that does not include the memory cell to be read. The readword line RWL corresponding to the row selection result is activated inthe selected memory mat including the memory cell to be read.

As a result, the bit line is connected to the memory cell MC in theselected memory mat, and the bit line is connected to the parallel dummycell DCP in the non-selected memory mat.

Hereinafter, the data write operation to the parallel dummy cell DCPwill be described.

In each of the memory mats MTa and MTb, two dummy write word lines areprovided respectively corresponding to two cell units of each paralleldummy cell DCP. The dummy write word lines extend in such a directionthat crosses the bit lines BL, /BL, i.e., in the row direction. Morespecifically, dummy write word lines DWWLa1 and DWWLa2 are provided inthe memory mat MTa, and dummy write word lines DWWLb1 and DWWLb2 areprovided in the memory mat MTb.

First, the dummy write word lines DWWLa1 and DWWLb1 are activated sothat a data write current Ip flows therethrough. Moreover, a data writecurrent is applied to each bit line BL, /BL. Thus, the storage data ofthe same level (e.g., “1”) is written to one of the cell units of eachparallel dummy cell DCP.

Then, the dummy write word lines DWWLa2 and DWWLb2 are activated so thatthe data write current Ip flows therethrough. Moreover, a data writecurrent having the opposite direction to that of the aforementioned datawrite current is applied to the bit lines BL, /BL. Thus, the storagedata of a different level from that described above (e.g., “0”) can bewritten to the other cell unit of each parallel dummy cell DCP.

As a result, the storage data “1” and “0” can be respectively written totwo cell units of each parallel dummy cell DCP in two write cycles. Thetiming of conducting the data write operation to the dummy memory cellsis the same as that described in the first modification of the thirdembodiment.

In each memory mat MTa, MTb, column selection gates are providedcorresponding to the respective memory cell columns. The columnselection gates CSG1 a, CSG2 a, . . . in the memory mat MTa couple thebit lines BL1, BL2, . . . to the data bus DB, respectively. The columnselection gates CSG1 b, CSG2 b, . . . in the memory mat MTb couple thebit lines /BL1, /BL2, . . . to the data bus DB, respectively.

Two column selection gates corresponding to the same memory cell columnin the memory mats MTa and MTb are turned ON/OFF in common according tothe column selection result of the column decoder 25. Therefore, the bitlines BL and /BL corresponding to the column selection result areconnected to the data buses DB and DB, respectively.

As a result, when the memory mat MTa is selected, the data bus DB isconnected to the selected memory cell, and the data bus DB is connectedto a parallel dummy cell DCP. In contrast, when the memory mat MTb isselected, the data bus DB is connected to the selected memory cell, andthe data bus DB is connected to a parallel dummy cell DCP.

The data read circuit 50 r has the same structure as that shown in FIG.38, and includes current supply circuits 51 and 52, an amplifier 53, andswitches 54 and 55.

In FIG. 40, the switches 54 and 55 make a complementary selection basedon a memory mat selection signal MT0. The memory mat selection signalMT0 is a one-bit signal indicating which of the memory mats MTa and MTbis selected. More specifically, when the memory mat MTa is selected, theswitch 54 connects the internal node Ns1 to the data bus DB, and theswitch 55 connects the internal node Ns2 to the data bus DB. Incontrast, when the memory mat MTb is selected, the switch 54 connectsthe internal node Ns2 to the data bus DB, and the switch 55 connects theinternal node Ns1 to the data bus DB.

As a result, in the selected memory mat, the sense current Is issupplied to the bit line connected to the memory cell MC. In thenon-selected memory mat, a current corresponding to twice the sensecurrent, i.e., 2·Is, is supplied to the bit line connected to theparallel dummy cell. Thus, the read voltage VH or VL is produced at theinternal node Ns1 according to the storage data of the selected memorycell MC. On the other hand, the read reference voltage Vref is producedat the internal node Ns2 by the parallel dummy cell as described inconnection with FIG. 36.

Thus, as in the case of the first modification of the third embodiment,the data read operation can be conducted with a large signal margin byusing the read reference voltage Vref that is reliably set to anintermediate value of the read voltages VH and VL while allowingmanufacturing variation, that is, by sensing and amplifying the voltagedifference between the read voltage VH or VL and read reference voltageVref.

Third Modification of Third Embodiment

Referring to FIG. 41, the structure of the third modification of thethird embodiment is different from that of the first modification of thethird embodiment shown in FIG. 38 in that the series dummy cells DCS ofFIG. 37 are provided instead of the parallel dummy cells DCP. Moreover,the current amount supplied from the current supply circuit 52 to thedummy memory cell in the data read operation is set to half the sensecurrent Is supplied to the memory cell MC, i.e., Is/2.

Since the structure associated with the data read operation is otherwisethe same as that of FIG. 38, detailed description thereof will not berepeated.

FIG. 42 is a conceptual diagram illustrating the data write operation tothe series dummy cell DCS.

FIG. 42 exemplarily illustrates the data write operation to two seriesdummy cells DCS corresponding to the bit line pair BLP1.

Referring to FIG. 42, the series dummy cell DCS connected to the bitline BL1 includes cell units CU1 and CU2. Similarly, the series dummycell DCS connected to the bit line /BL1 includes cell units CU3 and CU4.

Dummy write word lines DWWL1 and DWWL2 extend in such a direction thatcrosses the bit lines BL, /BL, i.e., in the row direction. The dummywrite word lines DWWL1 and DWWL2 respectively correspond to the rows ofthe series dummy cells DCS.

In the data write operation, the bit-line connecting transistor 62-1 isturned ON. Therefore, the data write current supplied to the bit linepair BLP1 flows through the bit lines BL1 and /BL1 as a reciprocatingcurrent.

The dummy write word line DWWL1 is activated so that a data writecurrent Ip flows therethrough. Moreover, a data write current Iw isapplied to the bit line pair BLP1. Thus, the storage data of differentlevels are respectively written to the cell units CU1 and CU2. It isherein assumed that the data “1” is written to the cell unit CU1, anddata “0” is written to the cell unit CU2.

Similarly, the dummy write word line DWWL2 is activated so that the datawrite current Ip flows therethrough. Moreover, the data write current 1w is applied to the bit line pair BLP1. Thus, the storage data ofdifferent levels can be written to the cell units CU3 and CU4,respectively. Regarding the series dummy cells DCS of the other bit linepairs as well, the same data write operation is conducted in parallel.As a result, the storage data “1” and “0” can be respectively written totwo cell units of each series dummy cell DCS.

Note that, by simultaneously activating the dummy write word lines DWWL1and DWWL2, the data can be written to each series dummy cell in a singlewrite cycle. Since the timing of conducting the data write operation tothe dummy memory cells is the same as that described above, descriptionthereof will not be repeated.

Since the data read operation is the same as that of the firstmodification of the third embodiment, detailed description thereof willnot be repeated. Thus, even when the series dummy cells are used, thedata read operation can be conducted with a large signal margin by usingthe read reference voltage Vref that is reliably set to an intermediatevalue of the read voltages VH and VL while allowing manufacturingvariation. Moreover, the use of the series dummy cells enablessuppression in power consumption of the data read operation as well asreduction in data write time to the dummy memory cell. Reliability ofthe memory cell largely depends on a current flowing through a tunnelfilm (tunnel barrier 104 in FIG. 3). Since this current is reduced toabout half in the series dummy cell, reliability of the dummy cell isimproved.

Fourth Modification of Third Embodiment

Referring to FIG. 43, the structure of the fourth modification of thethird embodiment is different from that of the second modification ofthe third embodiment shown in FIG. 40 in that the series dummy cells DCSof FIG. 37 are provided instead of the parallel dummy cells DCP.Moreover, the current amount supplied from the current supply circuit 52to the dummy memory cell in the data read operation is set to half thesense current Is supplied to the memory cell MC, i.e., Is/2.

Since the structure associated with the data read operation is otherwisethe same as that of FIG. 40, detailed description thereof will not berepeated.

Hereinafter, the data write operation to the series dummy cell DCS willbe described.

Dummy write word lines DWWLa and DWWLb respectively corresponding to thememory mats MTa and MTb are provided in the row direction.

First, the dummy write word lines DWWLa and DWWLb are activated so thata data write current Ip flows therethrough. Moreover, a data writecurrent +Iw is applied to each bit line BL, /BL of odd columns. Thus,the storage data of the same level (e.g., “1”) is written to one of thecell units of each series dummy cell DCS (the cell units CU1 and CU4 inFIG. 43).

Then, the dummy write word lines DWWLa and DWWLb are activated so thatthe data write current Ip flows therethrough. Moreover, a data writecurrent −Iw having the opposite direction to that of the data writecurrent +Iw is applied to each bit line BL, /BL of even columns. Thus,the storage data of a different level from that described above (e.g.,“0”) can be written to the other cell unit of each series dummy cell DCS(the cell units CU2 and CU3 in FIG. 43).

As a result, the storage data “1” and “0” can be respectively written totwo cell units of each series dummy cell DCS in two write cycles. Thetiming of conducting the data write operation to the dummy memory cellsis the same as that described in the first modification of the thirdembodiment.

Since the data read operation is the same as that of the secondmodification of the third embodiment, detailed description thereof willnot be repeated. Thus, even when the series dummy cells are used, thedata read operation can be conducted with a large signal margin by usingthe read reference voltage Vref that is reliably set to an intermediatevalue of the read voltages VH and VL while allowing manufacturingvariation. Moreover, the use of the series dummy cells enablessuppression in power consumption of the data read operation.

Fifth Modification of Third Embodiment

Referring to FIG. 44, in the structure of the fifth modification of thethird embodiment, the dummy memory cells are arranged so as to form adummy column. In FIG. 44, the parallel dummy cells DCP of FIG. 36 areused as dummy memory cells.

As in the case of the open-bit-line structure shown in FIGS. 40 and 43,the memory cell MC is provided for every bit line BL in each memory cellrow. A column selection gate CSG1, CSG2, . . . is turned ON in responseto activation of a corresponding column selection line CSL1, CSL2, . . ., i.e., according to the column selection result of the column decoder25. As a result, the bit line BL corresponding to the column selectionresult is coupled to one data bus DB of the data bus pair DBP.

The parallel dummy cells DCP of the dummy column are connected to adummy bit line DBL. Each parallel dummy cell DCP includes two cell unitsthat are connected to the dummy bit line DBL in response to activationof a corresponding read word line RWL. A dummy column selection gateCSGd is provided between the other data bus DB of the data bus pair DBPand dummy bit line DBL. The dummy column selection gate CSGd is turnedON in response to activation of a dummy column selection line CSLd. Inthe data read operation, the dummy column selection line CSLd isactivated regardless of the selected memory cell column.

FIG. 45 is a conceptual diagram illustrating the data write operation tothe parallel dummy cell of FIG. 44.

FIG. 45 exemplarily illustrates the data write operation to two paralleldummy cells DCP corresponding to the first and second rows.

Referring to FIG. 45, the parallel dummy cell DCP of the first rowincludes cell units CU1 and CU2. Similarly, the parallel dummy cell DCPof the second row includes cell units CU3 and CU4.

Each of the write word lines WWL corresponding to the respective memorycell rows is shared by the memory cells MC and cell units of the samememory cell row. For example, in FIG. 45, the cell unit CU1 correspondsto the write word line WWL1, the cell units CU2 and CU3 correspond tothe write word line WWL2, and the cell unit CU4 corresponds to the writeword line WWL3.

First, as shown by the solid arrows in the figure, the write word linesWWL1, WWL3, . . . of odd rows are activated so that a data write currentIp flows therethrough. Moreover, a data write current +Iw is applied tothe dummy bit line DBL. Thus, the storage data of the same data iswritten to the cell units CU1 and CU4. It is herein assumed that thestorage data “1” is written to the cell units CU1 and CU4.

Then, as shown by the dashed arrows in the figure, the write word linesWWL2, WWL4, . . . of even rows are activated so that the data writecurrent Ip flows therethrough. Moreover, a data write current −Iw havingthe opposite direction to that of the data write current +Iw is appliedto the dummy bit line DBL. Thus, the storage data of a different levelfrom that of the cell units CU1 and CU4 can be written to the cell unitsCU2 and CU3. More specifically, the data “0” is written to the cellunits CU2 and CU3.

As a result, the storage data “1” and “0” can be respectively written totwo cell units of each parallel dummy cell DCP in two write cycles. Thetiming of conducting the data write operation to the dummy memory cellsis the same as that described in the first modification of the thirdembodiment.

Referring back to FIG. 44, a data read circuit 50 rr provided instead ofthe data read circuit 50 r includes current supply circuits 51, 52 andan amplifier 53. The data read circuit 50 rr is different from the dataread circuit 50 r in that the internal nodes Ns1 and Ns2 are directlyconnected to the data buses DB and DB, respectively, without using theswitches 54 and 55.

As a result, the sense current Is is supplied to the bit linecorresponding to the column selection line, i.e., the bit line connectedto the memory cell MC, and a current corresponding to twice the sensecurrent, i.e., 2·Is, is supplied to the dummy bit line connected to theparallel dummy cell.

Thus, the read voltage VH or VL is produced at the internal node Ns1according to the storage data of the selected memory cell MC. On theother hand, the read reference voltage Vref is produced at the internalnode Ns2 by the parallel dummy cell as described in connection with FIG.36.

Accordingly, even when the parallel dummy cells are arranged in a dummycolumn, the data read operation can be conducted with a large signalmargin by using the read reference voltage Vref that is reliably set toan intermediate value of the read voltages VH and VL while allowingmanufacturing variation.

Sixth Modification of Third Embodiment

Referring to FIG. 46, the structure of the sixth modification of thethird embodiment is different from that of the fifth modification of thethird embodiment shown in FIG. 44 in that the series dummy cells DCS ofFIG. 37 are provided instead of the parallel dummy cells DCP.

The series dummy cells DCS are provided respectively corresponding tothe memory cell rows. Each series dummy cell DCS includes two cell unitsthat are selected by the same read word line RWL and connected in seriesbetween dummy bit lines DBL1 and DBL2.

The dummy bit line DBL2 is coupled to the ground voltage Vss through aswitch 62 r. The switch 62 r is turned ON in the data read operation inresponse to a control signal RE.

Dummy column selection gates CSGd1 and CSGd2 are respectively connectedbetween the dummy bit lines DBL1, DBL2 and data bus DB. The dummy columnselection gates CSGd1 and CSGd2 are respectively turned ON in responseto activation of dummy column selection lines CSLd1 and CSLd2. In thedata read operation, the dummy column selection line CSLd1 is activatedas well as the dummy column selection line CSLd2 is inactivatedregardless of the selected memory cell column.

Source lines SL1, SL2, . . . for supplying the ground voltage Vss areprovided corresponding to the respective memory cell columns. In thedata read operation, the ground voltage Vss is supplied to each memorycell MC through the source line SL.

The current amount supplied from the current supply circuit 52 to thedummy memory cell in the data read operation is set to half the sensecurrent Is supplied to the memory cell MC, i.e., Is/2. Since thestructure associated with the data read operation is otherwise the sameas that of FIG. 40, detailed description thereof will not be repeated.

FIG. 47 is a conceptual diagram illustrating the data write operation tothe series dummy cell DCS of FIG. 46. FIG. 47 exemplarily illustratesthe data write operation to the series dummy cell DCS of the first row.

Referring to FIG. 47, the series dummy cell DCS of the first rowincludes cell units CU1 and CU2 that are selected by the read word lineRWL1.

Each of the write word lines WWL corresponding to the respective memorycell rows is shared by the memory cells MC and cell units of the samememory cell row. Therefore, the data write operation to the series dummycell DCS of the first row is conducted using the write word line WWL1.

In the data write operation, a data write current flows as areciprocating current through a dummy bit line pair DBLP that is formedfrom the dummy bit lines DBL1 and DBL2 coupled by the data bus DB.

Accordingly, the write word line WWL1 is activated so that a data writecurrent Ip flows therethrough. Moreover, a data write current Iw isapplied to the dummy bit lines DBL1 and DBL2. Thus, the storage data ofdifferent levels are respectively written to the cell units CU1 and CU2.It is herein assumed that the data “1” is written to the cell unit CU1,and data “0” is written to the cell unit CU2.

Regarding the series dummy cells DCS of the other memory cell rows aswell, the same data write operation is conducted in parallel. As aresult, the storage data “1” and “0” can be respectively written to twocell units of each series dummy cell DCS in a single write cycle.

Since the data read operation is the same as that of the fifthmodification of the third embodiment, detailed description thereof willnot be repeated. Thus, even when the series dummy cells are used, thedata read operation can be conducted with a large signal margin by usingthe read reference voltage Vref that is reliably set to an intermediatevalue of the read voltages VH and VL while allowing manufacturingvariation. Moreover, the use of the series dummy cells enablessuppression in power consumption of the data read operation as well asreduction in data write time to the dummy memory cell. As describedbefore, since a current flowing through a tunnel film is reduced toabout half in the series dummy cell, reliability of the dummy cell isimproved.

Moreover, designing the dummy bit lines DBL1, DBL2, bit lines BL andsource lines SL extending in the same direction to have the sameelectric resistance value per unit length enables the path of the sensecurrent Is supplied to the memory cell MC and dummy memory cell to havethe same electric resistance value regardless of the position of theselected memory cell row. As a result, the sense current amount can beprevented from varying depending on the position of the selected memorycell row, allowing for further improvement in signal margin of the dataread operation.

Seventh Modification of Third Embodiment

Referring to FIG. 48, the structure of the seventh modification of thethird embodiment is different from that of the fifth modification of thethird embodiment shown in FIG. 44 in that each parallel dummy cell DCPis formed from cell units arranged in two columns. As described before,the structure of the cell unit CU is the same as that of the memory cellMC.

Such a structure enables the cell units in the dummy column portion andregular memory cells to be arranged with the same pitch. In other words,the memory cells MC arranged in extra two columns can be used as thecell units CU, thereby facilitating fabrication of the parallel dummycells DCP.

The parallel dummy cells DCP are provided corresponding to therespective memory cell rows. Each parallel dummy cell DCP includes twocell units CU selected by the same read word line RWL.

Dummy bit lines DBL1 and DBL2 are provided corresponding to therespective columns of the cell units.

Dummy column selection gates CSGd1 and CSGd2 are respectively connectedbetween the dummy bit lines DBL1, DBL2 and data bus DB. The dummy columnselection gates CSGd1 and CSGd2 are respectively turned ON in responseto activation of dummy column selection lines CSLd1 and CSLd2. In thedata read operation, the dummy column selection lines CSLd1 and CSLd2are activated regardless of the selected memory cell column.

Since the structure associated with the data read operation is otherwisethe same as that of FIG. 40, detailed description thereof will not berepeated.

FIG. 49 is a conceptual diagram illustrating the data write operation tothe parallel dummy cell of FIG. 48. FIG. 49 exemplarily illustrates thedata write operation to the parallel dummy cells DCP of the first row.

Referring to FIG. 49, the parallel dummy cell DCP of the first rowincludes cell units CU1 and CU2 selected by the read word line RWL1.

Each of the write word lines WWL corresponding to the respective memorycell rows is shared by the memory cells MC and cell units CU of the samememory cell row. Therefore, the data write operation to the paralleldummy cell DCP of the first row is conducted using the write word lineWWL1.

In the data write operation, a data write current flows as areciprocating current through a dummy bit line pair DBLP that is formedfrom the dummy bit lines DBL1 and DBL2 coupled by the data bus DB.

Accordingly, the write word line WWL1 is activated so that a data writecurrent Ip flows therethrough. Moreover, a data write current Iw isapplied to the dummy bit lines DBL1 and DBL2 as a reciprocating current.Thus, the storage data of different levels are respectively written tothe cell units CU1 and CU2. It is herein assumed that the data “1” iswritten to the cell unit CU1, and data “0” is written to the cell unitCU2.

Regarding the parallel dummy cells DCP of the other memory cell rows aswell, the same data write operation is conducted in parallel. As aresult, the storage data “1” and “0” can be respectively written to twocell units of each parallel dummy cell DCP in a single write cycle.

Since the data read operation is the same as that of the fifthmodification of the third embodiment, detailed description thereof willnot be repeated. Thus, even when the structure of the seventhmodification of the third embodiment is used, the data read operationcan be conducted with a large signal margin by using the read referencevoltage Vref that is reliably set to an intermediate value of the readvoltages VH and VL while allowing manufacturing variation. Moreover, thedata write time to the dummy memory cell can be reduced.

Note that, in the third embodiment and modifications thereof, thestructures of the MTJ memory cell using a diode as access element asshown in FIGS. 14 and 15 may be applied to the memory cell MC and thecell unit CU of the dummy memory cell.

Fourth Embodiment

In the fourth embodiment, a structural example of a dummy memory cellincluding the same tunnel magnetic resistive element as that of the MTJmemory cell will be described.

FIGS. 50A and 50B are conceptual diagrams illustrating a firststructural example of a dummy memory cell according to the fourthembodiment.

FIG. 50A shows the structure of a normal memory cell MC for comparison.

Referring to FIG. 50A, the memory cell MC includes a tunnel magneticresistive element TMR and an access transistor ATR. The accesstransistor ATR is turned ON in response to activation of a read wordline RWL. As a result, the tunnel magnetic resistive element TMR iselectrically coupled between a bit line BL or /BL and the ground voltageVss, and receives supply of a sense current Is.

As described in the first embodiment, the tunnel magnetic resistiveelement TMR includes an antiferromagnetic layer 101, a fixed magneticlayer 102, a free magnetic layer 103, and a tunnel barrier 104 formedfrom an insulating film. The fixed magnetic layer 102 is magnetized in afixed direction, whereas the free magnetic layer 103 is magnetized in adirection corresponding to a data write magnetic field generated by adata write current. Note that, in FIGS. 50A, 50B and the followingfigures, the tunnel barrier 104 is shown by a hatching pattern differentfrom that of the first embodiment for convenience.

For example, by controlling a data write current according to the writedata level, the free magnetic layer 103 is magnetized in the directionin parallel with that of the fixed magnetic layer 102 in order to storedata “0”, but is magnetized in the direction opposite to that of thefixed magnetic layer 102 in order to store data “1”. An electricresistance value Rl for the storage data “0” is therefore smaller thanan electric resistance value Rh for the storage data “1”. As a result, abit line BL (/BL) corresponding to the selected memory cell is subjectedto a voltage change according to the storage data level in the selectedmemory cell, that is, according to the electric resistance value Rh, Rl.

FIG. 50B shows a dummy memory cell DMCa according to the firststructural example of the fourth embodiment.

The dummy memory cell DMCa includes a dummy access transistor ATRd and atunnel magnetic resistive element TMRda, which are connected in seriesbetween a reference bit line BLref and the ground voltage Vss.

The term “reference bit line BLref” herein collectively refers to one ofthe bit lines BL and /BL that is not coupled to the selected memory cellas in, e.g., FIG. 38, and a dummy bit line DBL in, e.g., FIG. 44. On thereference bit line BLref is produced a read reference voltage Vref forcomparison with a voltage on the bit line BL (or /BL) coupled to theselected memory cell in the data read operation.

The dummy access transistor ATRd is turned ON in response to activationof a dummy read word line DRWL. In response to turning-ON of the dummyaccess transistor ATRd, the tunnel magnetic resistive element TMRda iselectrically coupled between the reference bit line BLref and the groundvoltage Vss, so that a sense current Is flows therethrough. In the ONstate, the dummy access transistor ATRd has a channel resistance equalto that of the access transistor ATR in the memory cell MC.

The tunnel magnetic resistive element TMRda includes anantiferromagnetic layer 101, a fixed magnetic layer 102, a free magneticlayer 103 and a tunnel barrier 104, which are designed in the samemanner as those of the tunnel magnetic resistive element TMR. The tunnelmagnetic resistive element TMRda is different from the tunnel magneticresistive element TMR in the memory cell MC in that the free magneticlayer 103 is magnetized in the direction perpendicular to the fixedmagnetization direction of the fixed magnetic layer 102. The tunnelmagnetic resistive element TMRda has the same shape as that of thetunnel magnetic resistive element TMR.

Accordingly, the electric resistance Rm of the tunnel magnetic resistiveelement TMRda is set to an intermediate value of the electric resistanceof the case where the free magnetic layer 103 is magnetized in the samedirection as that of the fixed magnetic layer 102 in the memory cell MC(electric resistance value Rl) and the electric resistance of the casewhere the free magnetic layer 103 is magnetized in the directionopposite to that of the fixed magnetic layer 102 in the memory cell MC(electric resistance value Rh). As described before, the electricresistance Rm is desirably set to Rm=Rl+(ΔR/2). The electric resistanceRm can be easily made close to the desired value by magnetizing thefixed magnetic layer 102 and the free magnetic layer 103 in thedirections perpendicular to each other.

Such a structure enables a proper read reference voltage Vref to beproduced on the reference bit line BLref by a dummy memory cell having atunnel magnetic resistive element with the same structure as that of thememory cell and capable of being fabricated without complicating themanufacturing process.

Referring to FIG. 51, a dummy memory cell DMcb according to a secondstructural example of the fourth embodiment includes a dummy accesstransistor ATRd and a tunnel magnetic resistive element TMRdb, which areconnected in series between the reference bit line BLref and the groundvoltage Vss. The dummy access transistor ATRd is turned ON in responseto activation of the dummy read word line DRWL. In the ON state, thedummy access transistor ATRd has a channel resistance equal to that ofthe access transistor ATR in the memory cell MC.

Thus, in response to activation of the dummy read word line DRWL, thetunnel magnetic resistive element TMRdb is electrically coupled betweenthe reference bit line BLref and the ground voltage Vss, so that thesense current Is flows therethrough.

The tunnel magnetic resistive element TMRdb in the dummy memory cellDMCb has the same shape as that of the tunnel magnetic resistive elementTMR in the memory cell. However, the tunnel magnetic resistive elementTMRdb is arranged on the chip with its longitudinal and lateraldirections reversed with respect to those of the tunnel magneticresistive element TMR in the memory cell. In other words, the tunnelmagnetic resistive element TMRdb is rotated by 90° in the horizontalplane of the figure with respect to the tunnel magnetic resistiveelement TMR in the memory cell. The free magnetic layer 103 ismagnetized in the longitudinal direction, whereas the fixed magneticlayer 102 is magnetized in the direction perpendicular to that of thefree magnetic layer 103.

Like the tunnel magnetic resistive element TMRda in FIG. 50B, theelectric resistance value of the tunnel magnetic resistive element TMRdbis therefore set to an intermediate value of the electric resistances Rhand Rl of the memory cell MC.

As shown in FIGS. 50A, 50B and 51, the respective fixed magnetic layers102 in the tunnel magnetic resistive elements TMRda and TMRdb have thesame magnetization direction as that of the tunnel magnetic resistiveelement TMR in the memory cell MC. Accordingly, in manufacturing a chip,the fixed magnetic layer in the memory cell and the fixed magnetic layerin the dummy memory cell can be simultaneously magnetized in onedirection, simplifying the manufacturing process.

In the tunnel magnetic resistive element TMRdb of FIG. 51, the freemagnetic layer 103 can be easily magnetized in the longitudinaldirection, that is, in the easy axis direction.

Referring to FIG. 52, a dummy memory cell DMCc according to a thirdstructural example of the fourth embodiment includes K tunnel magneticresistive elements TMRdc (where K is an integer equal to or larger than2) and a dummy access transistor ATRd, which are coupled in seriesbetween the reference bit line BLref and the ground voltage Vss. FIG. 52exemplarily shows the case of K=2.

The dummy access transistor ATRd is turned ON in response to activationof the dummy read word line DRWL. In the ON state, the dummy accesstransistor ATRd has a channel resistance equal to that of the accesstransistor ATR in the memory cell MC.

Referring to FIG. 53, each tunnel magnetic resistive element TMRdc isformed from combination of K tunnel magnetic resistive elements TMR inthe memory cell MC. In other words, the area of the tunnel magneticresistive element TMRdc is equal to the area of the tunnel magneticresistive element TMR multiplied by K. In the tunnel magnetic resistiveelement TMRdc as well, the fixed magnetic layer 102 and the freemagnetic layer 103 are magnetized in the directions perpendicular toeach other, as in the tunnel magnetic resistive elements TMRda and TMRdbin FIGS. 50B and 51. Accordingly, the electric resistance of the tunnelmagnetic resistive element TMRdc is given by Rm/K according to the areathereof.

In particular, when K=2, for example, the tunnel magnetic resistiveelement TMRdc has a shape close to square, so that the magnetizationstate can be stabilized in each of the fixed magnetic layer 102 and thefree magnetic layer 103.

Referring back to FIG. 52, K tunnel magnetic resistive elements TMRdceach having the above structure are connected in series, and theelectric resistance of the dummy memory cell DMCc is set in the same wayas that in the case of the dummy memory cells DMCa and DMCb. Thisenables a proper read reference voltage Vref to be produced on thereference bit line BLref in response to activation of the dummy readword line DRWL.

Connecting a plurality of tunnel magnetic resistive elements TMRdc inseries also enables suppression of a voltage that is applied to thetunnel barrier 104 formed from an insulating film in each tunnelmagnetic resistive element. As described in the third embodiment,according to the common arrangement of dummy memory cells, a singledummy memory cell DMC is arranged for a multiplicity of memory cells MC.Therefore, a voltage (electric field) is frequently applied to thetunnel barrier (insulating film) in the tunnel magnetic resistiveelement of the dummy memory cell DMC. Accordingly, reducing a voltagethat is applied to the tunnel barrier in each tunnel magnetic resistiveelement of the dummy memory cell allows for improved reliability of thedummy memory cell.

Referring to FIG. 54, a dummy memory cell DMCd according to a fourthstructural example of the fourth embodiment includes a tunnel magneticresistive element TMRdd and a dummy access transistor ATRd, which arecoupled in series between the reference bit line BLref and the groundvoltage Vss. The dummy access transistor ATRd is turned ON in responseto activation of the dummy read word line DRWL. In the ON state, thedummy access transistor ATRd has a channel resistance equal to that ofthe access transistor ATR in the memory cell MC.

The area of the tunnel magnetic resistive element TMRdd is equal to thatof the tunnel magnetic resistive element TMR in the memory cell, and theshape thereof is close to square. The dummy memory cell DMCd is thusformed from a single tunnel magnetic resistive element TMRdd. The fixedmagnetic layer 102 and the free magnetic layer 103 in the tunnelmagnetic resistive element TMRdd are magnetized in the directionsperpendicular to each other, but the magnetization state in eachmagnetic layer can be stabilized.

Such a structure also enables a proper read reference voltage Vref to beproduced on the reference bit line BLref in response to activation ofthe dummy read word line DRWL.

Note that data write operation for magnetizing the free magnetic layer103 in a prescribed direction must be conducted for each of the abovetunnel magnetic resistive elements TMRda to TMRdd.

Data write operation to the dummy memory cell can be periodicallyconducted during operation of the MRAM device. For example, data writeoperation to the dummy memory cell of the same memory cell column asthat of the selected memory cell may be conducted in each data writecycle. This enables storage data of a prescribed content in the dummymemory cell to be retained more reliably.

Alternatively, a test mode independent of the normal operation may beprovided in operation test after manufacturing a chip or ininitialization cycle after power-on of the MRAM device so that datawrite operation to each dummy memory cell is conducted in the test mode.This enables data of a prescribed content to be written to a dummymemory cell without increasing the time required for data writeoperation in the normal operation.

First Modification of Fourth Embodiment

In the modifications of the fourth embodiment below, the tunnel magneticresistive element in the dummy memory cell has the same electricresistance as that of the tunnel magnetic resistive element TMR in thememory cell MC.

Referring to FIG. 55, a dummy memory cell DMCe according to the firstmodification of the fourth embodiment includes tunnel magnetic resistiveelements 201, 202, 203 and 204 and a dummy access transistor ATRdd.

The tunnel magnetic resistive elements 201 to 204 are connected inseries-parallel between the reference bit line BLref and the dummyaccess transistor ATRdd. More specifically, the tunnel magneticresistive elements 201 and 202 are connected in series between thereference bit line BLref and the dummy access transistor ATRdd.Similarly, the tunnel magnetic resistive elements 203 and 204 areconnected in series between the reference bit line BLref and the dummyaccess transistor ATRdd. The tunnel magnetic resistive elements 201, 202and the tunnel magnetic resistive elements 203, 204 are connected inparallel with each other. Each of the tunnel magnetic resistive elementsis thus connected in series with at least one of the remainder.

Each of the tunnel magnetic resistive elements 201 to 204 has the sameshape and structure as those of the tunnel magnetic resistive elementTMR in the memory cell MC, and their respective electric resistancevalues are each equal to the electric resistance value Rl in the memorycell MC. In other words, in each of the tunnel magnetic resistiveelements 201 to 204, the free magnetic layer 103 and the fixed magneticlayer 102 are magnetized in the directions in parallel with each other,as in the memory cell storing data “0”. Accordingly, a magnetic layerhaving a fixed magnetization direction may be used instead of the freemagnetic layer 103. In this case, magnetization of the tunnel magneticresistive elements in the dummy memory cell can be completed duringmanufacturing of a chip, eliminating the need to write data to the dummymemory cell during actual operation.

FIG. 56 shows an equivalent circuit of the dummy memory cell DMCe.

Referring to FIG. 56, in the dummy memory cell DMCe, a combinedresistance of the tunnel magnetic resistive elements 201 to 204connected in series-parallel between the reference bit line BLref andthe dummy access transistor ATRdd is equal to Rl. In the ON state, thedummy access transistor ATRdd has a channel resistance RTG(dm) given byRTG(dm)=RTG(MC)+(ΔR/2), where RTG(MC) is a channel resistance of theaccess transistor ATR in the memory cell MC in the ON state.

The channel resistance RTG(dm) can be obtained by reducing the ratio ofchannel width W to channel length L, that is, the ratio W/L, in thedummy access transistor ATRdd as compared to the access transistor ATRin the memory cell MC. More specifically, designing the accesstransistor ATR and the dummy access transistor ATRdd so that therespective channel widths are equal to each other and the channel lengthL of the dummy access transistor ATRdd is longer than that of the accesstransistor ATR enables fabrication of the dummy access transistor ATRddhaving the channel resistance RTG(dm) in the ON state.

Such a structure enables a proper read reference voltage Vref to beproduced on the reference bit line BLref by the dummy memory cell DMCeto which a sense current Is is applied in response to activation of thedummy read word line DRWL. Moreover, connecting a plurality of tunnelmagnetic resistive elements in series between the reference bit lineBLref and the ground voltage Vss allows for improved reliability of thetunnel barrier (insulating film) in the dummy memory cell to which avoltage is frequently applied, as in the case of the dummy memory cellDMCc in FIG. 52.

Second Modification of Fourth Embodiment

Referring to FIG. 57, a dummy memory cell DMCf according to the secondmodification of the fourth embodiment includes a tunnel magneticresistive element TMR and a dummy access transistor ATRdd, which areconnected in series between the reference bit line BLref and the groundvoltage Vss. The tunnel magnetic resistive element TMR is the same asthat in the memory cell MC. In the dummy memory cell DMCf, themagnetization direction of the free magnetic layer 103 in the tunnelmagnetic resistive element TMR is fixed to the same direction as that ofthe fixed magnetic layer 102. As a result, the tunnel magnetic resistiveelement TMR has a fixed electric resistance value Rl. Instead of asingle tunnel magnetic resistive element TMR, a plurality of tunnelmagnetic resistive elements connected in series-parallel with each otherand having a combined resistance Rl as shown in FIG. 55 may be used.

Accordingly, like the dummy memory cell DMCe in FIG. 55, magnetizationof the tunnel magnetic resistive elements in the dummy memory cell canbe completed during manufacturing of a chip, eliminating the need towrite data to the dummy memory cell during actual operation.

In the structure of the second modification of the fourth embodiment, avoltage VDWL on the activated dummy read word line DRWL is a variablevoltage that is adjustable.

Hereinafter, operation of the dummy memory cell according to the secondmodification of the fourth embodiment will be described in connectionwith FIG. 58.

Referring to FIG. 58, regarding the data write operation, operatingwaveforms upon writing data to the memory cell MC are shown. Morespecifically, in data write operation, the dummy read word line DRWL isinactive at L level (ground voltage Vss), and data is written to theselected memory cell by data write currents Ip and +Iw respectivelyflowing through the write word line WWL and the bit line BL. Asdescribed before, data write operation to the dummy memory cell DMCf isnot required during actual operation.

In data read operation, the read word line RWL corresponding to theselected row is activated to H level (power supply voltage Vcc). Thedummy read word line DRWL is activated to H level in order to couple thedummy memory cell DMCf to the reference bit line BLref. In the activestate (H level), the dummy read word line DRWL is set to a variablevoltage VDWL. A sense current Is is supplied to the bit linecorresponding to the selected memory cell and the reference bit lineBLref coupled to the dummy memory cell.

The variable voltage VDWL is adjustable so that the dummy accesstransistor ATRdd in the dummy memory cell DMCf has a channel resistanceRTG(dm). As a result, a read reference voltage Vref that is equal to anintermediate value of the bit line voltages respectively correspondingto the case where the storage data in the selected memory cell is “1”and “0” can be produced on the reference bit line BLref.

Such a structure enables the electric resistance produced by the dummymemory cell DMCf to be optimally adjusted according to manufacturingvariation of the dummy access transistor ATRdd and the tunnel magneticresistive element TMR. As a result, the read reference voltage Vref canbe adjusted to the level capable of assuring the maximum data readmargin.

Third Modification of Fourth Embodiment

Referring to FIG. 59, the dummy memory cell DMCg according to the thirdmodification of the fourth embodiment includes a tunnel magneticresistive element TMR and dummy access transistors ATRd1 and ATRd2. Thetunnel magnetic resistive element TMR and the dummy access transistorsATRd1 and ATRd2 are coupled in series between the reference bit lineBLref and the ground voltage Vss.

In the tunnel magnetic resistive element TMR, the magnetizationdirection of the free magnetic layer 103 is fixed to the same directionas that of the fixed magnetic layer 102, as in the case of the dummymemory cell DMCf in FIG. 57. As a result, the tunnel magnetic resistiveelement TMR has a fixed electric resistance value Rl.

The access transistor ATRd1 has its gate connected to a correspondingdummy read word line DRWL. The access transistor ATRd2 has its gateconnected to a wiring DRWLt for supplying a control voltage Vrm. Theaccess transistor ATRd1 is designed to have the same ratio of channelwidth to channel length, W/L, as that of the access transistor ATR inthe memory cell MC. The access transistor ATRd2 is designed to have thesame ratio of channel width to channel length, W/L, as that of the dummyaccess transistor ATRdd.

Hereinafter, operation of the dummy memory cell DMCg will be described.

Referring to FIG. 60, in data read operation, a voltage on the activateddummy read word line DRWL is set to the power supply voltage Vcc, as inthe case of the read word line RWL corresponding to the selected memorycell. The wiring DRWLt connected to the gate of the access transistorATRd2 transmits the control voltage Vrm.

Accordingly, the dummy access transistor ATRd1 turned ON in response toactivation of the dummy read word line DRWL has the same channelresistance RTG(MC) as that of the access transistor ATR in the selectedmemory cell MC turned ON in response to activation of the read word lineRWL.

The channel resistance of the dummy access transistor ATRd2 variesaccording to the control voltage Vrm. Accordingly, adjusting the controlvoltage Vrm so that the dummy access transistor ATRd2 has a channelresistance ΔR/2 enables proper adjustment of the level of the readreference voltage Vref produced on the reference bit line BLref. Thus,by tuning the control voltage Vrm, the read reference voltage Vref canbe adjusted to the level capable of assuring the maximum data readmargin.

Since the data write operation is the same as that of FIG. 58, detaileddescription thereof will be omitted. Note that, since the dummy memorycell DMCg has a fixed magnetization direction, data write operation tothe dummy memory cell need not be conducted during actual operation.Supply of the control voltage Vrm to the wiring DRWLt may bediscontinued in the data write operation.

Fourth Modification of Fourth Embodiment

Referring to FIG. 61, a dummy memory cell DMCh according to the fourthmodification of the fourth embodiment includes tunnel magnetic resistiveelements 205, 206, 207 and 208 and a dummy access transistor ATRd. Thetunnel magnetic resistive elements 205, 206, 207 and 208 are connectedin series-parallel between the reference bit line BLref and the dummyaccess transistor ATRd. Each of the tunnel magnetic resistive elements205 to 208 has the same shape and structure as those of the tunnelmagnetic resistive element TMR in the memory cell MC.

One of the tunnel magnetic resistive elements 205 and 206 has storagedata “1” written therein and thus has an electric resistance value Rh.The other tunnel magnetic resistive element has storage data “0” writtentherein and thus has an electric resistance value Rl. Similarly, one ofthe tunnel magnetic resistive elements 207 and 208 has an electricresistance value Rl and the other has an electric resistance value Rh.Accordingly, the combined resistance of the tunnel magnetic resistiveelements 205 to 208 is (Rh+Rl)/2=Rl+(ΔR/2).

The dummy access transistor ATRd is turned ON in response to activationof the dummy read word line DRWL, and has the same channel resistanceRTG(MC) as that of the access transistor ATR in the memory cell MC.Accordingly, a proper read reference voltage Vref can be produced on thereference bit line BLref in response to activation of the dummy readword line DRWL.

Hereinafter, data write operation to the tunnel magnetic resistiveelements in FIG. 61 will be described in connection with FIG. 62.

In FIG. 62, the tunnel magnetic resistive elements 205 to 208 in asingle dummy memory cell DMCh are arranged in two rows by two columns.Such a structure enables the dummy memory cell DMCh to be provided oneach memory cell column. FIG. 62 shows arrangement of the dummy memorycell on the first memory cell column. In data write operation, bit linesBL1 and /BL1 are electrically coupled to each other at their respectiveone ends, so that a data write current 1 w flows therethrough as areciprocating current.

First, a data write current Iw is applied to the bit lines BL1 and /BL1with a dummy write word line DWWL1 being activated, whereby the storagedata “1” and “0” can be written to the tunnel magnetic resistiveelements 205 and 206, respectively. As a result, the electric resistancevalues of the tunnel magnetic resistive elements 205 and 206 are set toRh and Rl, respectively.

Then, a dummy write word line DWWL2 is activated so that a data writecurrent Ip flows therethrough, and the data write current 1 w is appliedto the bit lines BL1 and /BL1 in the same direction as that describedabove. Thus, the storage data “1” and “0” can be written to the tunnelmagnetic resistive elements 207 and 208, respectively. As a result, theelectric resistance values of the tunnel magnetic resistive elements 207and 208 are set to Rh and Rl, respectively.

Thus conducting the data write operation to the tunnel magneticresistive elements 205 to 208 enables implementation of the dummy memorycell DMCf producing a proper read reference voltage Vref.

Note that, as described in the fourth embodiment, the data writeoperation to the dummy memory cell may be conducted periodically (e.g.,in each data write cycle) during operation of the MRAM device in orderto retain storage data of a prescribed content in the dummy memory cellin a more reliable manner. Alternatively, in order to write data of aprescribed content to the dummy memory cell without increasing the timerequired for data write operation in the normal operation, a test modeindependent of the normal operation may be provided in operation testafter manufacturing a chip or in initialization cycle after power-on ofthe MRAM device so that data write operation to the dummy memory cellscorresponding to the respective memory cell columns is conducted inparallel in the test mode.

Fifth Modification of Fourth Embodiment

Referring to FIG. 63, a dummy memory cell DMCi according to the fifthmodification of the fourth embodiment includes a tunnel magneticresistive element TMR and a dummy access transistor ATRd, which areconnected in series between the reference bit line BLref and the groundvoltage Vss.

The tunnel magnetic resistive element TMR in the dummy memory cell DMCihas the same structure and shape as those of the tunnel magneticresistive element TMR in the memory cell MC, and is magnetized in such adirection that it has an electric resistance value Rh. In the ON state,the dummy access transistor ATRd has a channel resistance RTG(MC) likethe access transistor ATR in the memory cell MC.

The memory cell MC includes an access transistor ATR and a tunnelmagnetic resistive element TMR, which are connected in series betweenthe bit line BL (/BL) and the ground voltage Vss. In the ON state, theaccess transistor ATR in the memory cell MC has a channel resistanceRTG(MC). The electric resistance of the tunnel magnetic resistiveelement TMR in the memory cell MC is either Rh or Rl according to thestorage data level.

In the structure of the fifth modification of the fourth embodiment, aresistive element 210 is provided in series between a data read circuitand the selected memory cell. The electric resistance value of theresistive element 210 is smaller than the difference between electricresistances, ΔR, corresponding to the difference between the storagedata levels in the memory cell MC, and is desirably set to (ΔR/2).

The not-shown data read circuit generates read data according to thevoltage difference between the bit line BL (/BL) coupled in series withthe selected memory cell and the resistive element 210 and the referencebit line BLref on which a read reference voltage Vref is produced. Thedifference in electric resistance between the path of the sense currentIs corresponding to the selected memory cell and the path of the sensecurrent Is corresponding to the dummy memory cell DMCi is thereforeeither (ΔR/2) or −(ΔR/2). Accordingly, data read operation can beconducted by comparing the voltages on the bit line BL (/BL) and thereference bit line BLref with each other.

Such a structure enables the memory cell MC and the dummy memory cellDMC to have the same structure on the memory array. As a result, thedata read margin can be assured according to manufacturing variation ofthe tunnel magnetic resistive element TMR.

For example, the dummy memory cell DMCi is provided for each of the bitlines BL and /BL.

FIG. 64 is a conceptual diagram illustrating data write operation to thedummy memory cell in FIG. 63. FIG. 64 shows the arrangement of dummymemory cells on the first memory cell column.

Referring to FIG. 64, in data write operation, bit lines BL1 and /BL1are electrically coupled to each other at their respective one ends, sothat a data write current Iw flows therethrough as a reciprocatingcurrent.

In the first cycle, a dummy write word line DWWL1 is activated so that adata write current Ip flows therethrough. Moreover, a data write current+Iw is supplied to the bit line BL1. This enables the storage data “1”to be written to the dummy memory cell DMCi corresponding to the dummywrite word line DWWL1, whereby the electric resistance thereof is set toRh.

In the following cycle, a dummy write word line DWWL2 is activated and adata write current Iw is supplied in the direction opposite to thatdescribed above. This enables the storage data “1” to be written to thedummy memory cell DMCi corresponding to the dummy write word line DWWL2.Thus conducting two write cycles allows the storage data “1” to bewritten to each of the dummy memory cells DMCi corresponding to eachmemory cell column, whereby the respective electric resistance valuesthereof are set to Rh.

As described before, the data write operation to the dummy memory cellDMCi may be conducted during operation of the MRAM device (for example,in each data write cycle), or in the test mode that is set either duringoperation test after manufacturing a chip or in the initialization cycleafter power-on of the MRAM device.

As shown in FIG. 65, the resistive element 210 may be formed from a MOS(metal oxide semiconductor) transistor 215 receiving an adjustablecontrol voltage Vm at its gate. Such a structure enables the resistancevalue of the MOS transistor 215 to be adjusted according to the value ofthe control voltage Vm. Accordingly, adjustment capable of assuring themaximum read operation margin in the MRAM device can be conductedaccording to manufacturing variation and the like.

Note that the fourth embodiment and the modifications thereof may beapplied to an MTJ memory cell using a diode as access element as shownin FIGS. 14 and 15.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spritand scope of the present invention being limited only by the terms ofthe appended claims.

1-14. (canceled)
 15. A thin film magnetic memory device, comprising: aplurality of memory cells for storing data, wherein each of said memorycells includes an access gate selectively turned ON in data readoperation, and a magnetic storage portion connected in series with saidaccess gate, and having either a first electric resistance or a secondelectric resistance higher than said first electric resistance dependingon the stored data, and said thin film magnetic memory device furthercomprising: a data line that is electrically coupled to a selectedmemory cell through a turned-ON access gate of said selected memory cellin said data read operation, said selected memory cell being a memorycell selected from said plurality of memory cells for said data readoperation; a reference data line for transmitting in said data readoperation a read reference voltage for comparison with a voltage on saiddata line; and a plurality of dummy memory cells for producing said readreference voltage, wherein each of said dummy memory cells includes adummy access gate selectively turned ON in said data read operation, aplurality of dummy magnetic storage portions that are electricallycoupled to said reference data line in response to turning-ON of saiddummy access gate, and a dummy resistance gate made of a field effecttransistor, and wherein an electric resistance of said plurality ofdummy magnetic storage portions is equal to said first electricresistance, and said dummy access gate in an ON state has an electricresistance that is equal to that of said access gate in an ON state, andsaid dummy resistance gate has a third electric resistance, said thirdelectric resistance being smaller than a difference between said firstand second electric resistance.
 16. The thin film magnetic memory deviceaccording to claim 15, wherein said field effect transistor has a gatereceiving an adjustable control voltage.
 17. The thin film magneticmemory device according to claim 15, wherein, in normal data writeoperation, data is written to at least one of said dummy magneticstorage portions in parallel with said magnetic storage portion in amemory cell selected from said plurality of memory cells for said datawrite operation.
 18. The thin film magnetic memory device according toclaim 15, further comprising a test mode for writing prescribed data toeach of said dummy memory cells, said test mode being conductedindependently of normal operation, wherein data is written to at leastone of said dummy magnetic storage portions in said test mode.